2SJ12 Search Results

2SJ122

Abstract: 2SK428 diode 50v 5A K428 diode K428 Hitachi 2SJ
Contextual Info: HITACHI/iOPTOELECTRONICS} 44962U 5 H it A C H I/ O P T O E L h U IK 73 DE 0 0 1 0 071 73C 10071 U N iü b ; O T -3?-// 2SK428-SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ122 ¿3.6 ±0 2 6.3'min.

Contextual Info: 44^205 2SJ127 0012^23 Ô74 » H I T 4 HITACHI/ OPTOELECTRONICS blE D SILICON P CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching 1. Gate • Low Drive Current 2. Drain (F lange) • No Secondary Breakdown

Diode SV-02

Abstract: SV-02 diode 2SJ127 st75t
Contextual Info: 4 4 ^ 2 0 5 0012^23 Ô74 » H I T 4 2SJ127 HITACHI/ OPTOELECTRONICS blE D SILICON P CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1. Gate 2. Drain (Flange) 3. Source (Dimensions in mm)

lm5752

Abstract: K 3919 2SJ128 3919 lm575
Contextual Info: N E C EL EC TR ON IC S INC 6427525 N E C Tfl ELECTRONICS DE I ti457S5S DQlTDEa b 9ÖD INC D 19023 T '-3 < 7 - 7 MOS FIELD EFFECT POWER TRANSISTOR 2SJ128 FAST SW ITCHING P-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (Unit: mm FEATURES

2SJ128-Z

Abstract: TC181
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ128-Z P-CHANNEL SILICON POWER MOS FET FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit: mm • Suitable for switching power supplies, actuator controls, and pulse circuits. 5.0 ±0.2 • 4 V gate drive (Logic level)

2SJ120L

Abstract: 2SJ120
Contextual Info: b l E J> 4 4 ^ 2 0 5 O D I E L O Q bS I H I T 4 2SJ120L,2SJ120S HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET H Type £>Type HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK416 _ a • FEATURES • Low On-Resistance.

2SJ123

Abstract: 2SK442
Contextual Info: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ123 HIGH SPEED SWITCHING APPLICATION. Unit in mm DC-DC CONVERTER APPLICATION. 1 Û 3 MAX, 0 3 .6 ± a 2 FEATURES : . Low Drain-Source Saturation Voltage : Vj S ON)=l -4V(Typ.) . High Forward Transfer Admittance

2SJ120

Abstract: 2SK416 2SJ120S 2SK416L C3S30
Contextual Info: 2S K 416 L ,2S K 416 s y U =1> N 9 V * JUMOS FET_ SILICON N-CHANNEL MOS FET *»*• «* y f >9 ñ 2SJ120 L ,2SJ120 § t =1> HIGH SPEED POW ER SWITCHING Complementary pair with 2SJ120 , 2SJ120S * > £ V T=P (DType 1. 2. Y — h ! G ate Y V -{ y \ D rain

2sj120

Abstract: 2SK416
Contextual Info: 2SJ120 ,2SJ120 § S IL IC O N P -C H A N N EL M O S F E T ra O i* S ir * . 2.« 2 S K 4 1 6 ¿ 3 / 7 ’ lJ > y 9 ') *< 7 •« s • 'J'fti'' V y - y . • * • £ £ t a f t W iii< A S O )fr £ i‘ . • X4 D C -D C a y / « - * . '< y »*:>) I t.4

2SJ128

Abstract: VDS-100
Contextual Info: mos m m n M O S F ie ld E f fe c t P o w e r T r a n s is t o r s 2SJ128,1 28-Z P7- + & JU ' < r7 — M OS F E T •X - f ' y - ? - > 7 l if f l O D x V '7 'U 'O V V cs = — 4 V T 'i O r h E f t j 'j 'n i j l - C 'i - . o ü iR USl., (-0.8 2) ^ /_•¡ h W r t - B C

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

2SJ122

Abstract: 2SK428 t3jh Hitachi Scans-001 vi-73 diode power Voltage73
Contextual Info: HITACHI/ÍOPTOELECTRONICSl r 4496205 73 73C HITACHI / COPTOLLbCI HONICS ’ DE § 44 TL.S0 S □DDTTLT ñ 09969 D T-3?-2/ 2SJ122-SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 428

2sj28

Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40

2SJ122

Contextual Info: HITACHI/ÍOPTOELECTRONICSl r 4496205 73 DE § 4 4 TL.S0 S □DDTTLT ñ 73C 0 9 9 6 9 HITACHI / COPTOLLbCI HONICS ’ D T -3 ? -2 / 2SJ122-SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 428

2SJ128

Abstract: 2SJ128-Z K1988
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SJ128,128-Z Pチャネル・パワーMOS FET スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○2SJ128-ZはハイブリッドIC実装に最適なリード加工品です。

YTF450

Abstract: YTF451 YTFP450
Contextual Info: Replacement Guide T y p e No. E q u i v a le n t/ r e c o m m e n d e d p r o d u c t T y p e N o. 2SK1251 2SK1112 YTF450 2SK1252 2SK1113 YTF451 2SJ123 2SJ147 YTFP450 YTF441 - YTF442 YTF443 YTF452 YTF453 YTF440 2SK1488 E q u i v a le n t/ r e c o m m e n d e d p r o d u c t

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

2SJ125

Abstract: marking XI
Contextual Info: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ125 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING o - +0.5 2-5 0.3 is especially designed for low frequency voltage amplify, analog switch

2SJ128

Abstract: d1361
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ128 FAST SW ITCHING P-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS Unit: mm • 2 .3 ± 0.2 0.5 ± 0.1 Suitable for switching power supplies, actuater controls, and pulse circuits.

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

TE85L PACKING TE85

Abstract: Reel Taping Specification JEDEC toshiba tape and reel 2SK851 toshiba packing naming 2SK405 equivalent 2SK1529 LT 5212 2sk1529/2sj200 equivalent 2SJ200 equivalent
Contextual Info: TO SHIBA Quick Reference I. Quick Reference Table for Taping 1. TO-92 Device PACKING TAPING TYPE NO. REEL TPE1 DIMENSIONAL OUTLINE d ir e c t io n of tape feed QTY. 2.000PCS/ REEL 1 2 .7 AMMO PACK 2. TPER1 D IR E C T IO N OF TAPE FEED TPE2 D IR E C T IO N OF

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and