2N3791 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2N3792

Abstract: 2N3791 2N3715 2N3716
Contextual Info: SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications

2N3792

Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

2N3790

Abstract: 2N3789
Contextual Info: 2N3789 2N3790 2N3791* 2N3792* *also available as JAN, JANTX, JANTXV SILICON PNP POWER TRANSISTORS .designed for medium-speed switching and amplifier applications. • TOTAL SWITCHING TIME @ 3 A « 1 iS (TYP 0.5 V (TYP) @ 4.0 A, I„ = 0.4 A • LOW VCE(SAT) =

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247

2N3716

Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

2N3792

Abstract: 2N3791 1000C
Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices Qualified Level 2N3791 JAN JANTX JANTXV 2N3792 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N3791

Contextual Info: 2N3791 Silicon P-N-P Epitaxial-base High Power Transistor. -60V - 150. 1 of 1 Home Part Number: 2N3791 Online Store 2N3791 Diodes Silic o n P- N-P Epit axial-bas e High Po w er Trans is t o r. - 6 0 V -

Contextual Info: 2N3791 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

transistor 2N3907

Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A

2N3792 MOTOROLA

Abstract: 2N3790 MOTOROLA motorola 2n3791 2N3792 2N3791 2N3716 2N3789 2N3790 motorola 2n3789 2N3791 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N3791/D SEMICONDUCTOR TECHNICAL DATA 2N3791 2N3792 Silicon PNP Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • [ Total Switching Time @ 3.0 A 1.0 µs typ

2N3715

Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
Contextual Info: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec

Contextual Info: PNP High Power Silicon Transistor 2N3791 & 2N3792 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/379 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N3791 2N3792 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage

Contextual Info: TEXAS INSTR COPTO} ^2 DË~|ôTbl7ab 0D3bSfil S9 61 72 & TEXAS INSTR OPTO D 62C 3 6 5 8 1 ' 2N3791 P-N-P SILICON POWER TRANSISTOR NOVEMBER 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With 2N3713 150 W at 25°C Case Temperature e 10 A Continuous Collector Current

2N4004

Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665

Contextual Info: rz7 SCS-THOMSON ^7# 2N3715/2N3716 2N3791/2N3792 KflOœ iLiûra !DOS COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715 AND 2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec

2N3792

Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 379 Devices Qualified Level 2N3791 JAN JANTX JANTXV 2N3792 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N3713

Abstract: 2N3791
Contextual Info: TEXAS INSTR C O P T O S 9 6 1 7 2 & TEXAS ^2 IN S T R 0Q3bSfll O P T O 62C 3 6 5 8 1 2N3791 P-N-P SILICON POWER TRANSISTOR NOVEMBER 19 6 8 - REVISED OCTOBER 19 8 4 T - 3S-/3 Designed for Complementary Use With 2N 3713 150 W at 2 5 °C Case Temperature e

2N3789

Abstract: 2N3792 2N3790 2N3791 2N3716 P125a
Contextual Info: SILICON PNP POWER TRANSISITORS PNP 2N3789 Thru 2N3792 designed for medium-speed switching and amplifier applications Boca Semiconducotor Corp. FEATURES * Tow Gain Ranges: BSC hFE Min = 15 and 30@IC=3A -2N3789.2N3790 25 and 50@lc=1A -2N3791,2N3792 h t t p ://wWW.b0Casemi.C0m

2N3791

Contextual Info: 2N3791 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3790

Abstract: 2N3791 2N3792 2N3789 2N3716 m0spec
Contextual Info: ÆàMOSPEC SILICON PNP POWER TRANSISITORS PNP 2N3789 Thru 2N3792 . designed for medium-speed switching and amplifier applications FEATURES * Tow Gain Ranges: hFE Min = 15 and 30@IC=3A -2N3789.2N3790 25 and 50@lc=1A -2N3791,2N3792 * Excellent Safe Operating Areas

2N3791SMD

Contextual Info: 2N3791SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed

2N3792

Abstract: 2N3791 2N3715 2N3716
Contextual Info: Inchange Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications

Contextual Info: .P o w e r Transistors File Num ber 2N3791, 2N3792 1059 HARRIS SEMICOND SECTOR 27E D 430S271 0 ü n ô 2 7 T Silicon P -N -P Epitaxial-Base H ig h-P o w er Transistors 1 »HAS - 3 3 - ^ 3 " TERMINAL DESIGNATIONS R ugged, B ro a d ly A p p lic a b le Devices