2N3716 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2N3792

Abstract: 2N3791 2N3715 2N3716
Contextual Info: SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications

2N3716

Contextual Info: SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline TO-3 and symbol

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N3792

Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

2N3716

Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

Contextual Info: 2N3716 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3716 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 10 A Ib 4.0 A 80 V 150 W @ T e # 25 ° C Tj -65 0 C to +200 0 C Ts t g -65 0 C to +200 0 C qje 1.17 0 C/W

2N3715

Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
Contextual Info: Data Sheet 2N3713 2N3714 2N3715 2N3716 Central" Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors d e s c r ip t io n

2N3716

Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
Contextual Info: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792

2N3715

Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
Contextual Info: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec

Contextual Info: m 2N3716 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3716 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS lc 10 A Ib 4.0 A < O m P diss MAX. BOTH e n d 80 V 150 W @ T C= 2 5 °C Tj -65 °C to +200 °C

2N39024

Abstract: jantx 2n5302
Contextual Info: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716*' 80 10 2N39024* 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60

2N4004

Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665

Contextual Info: rz7 SCS-THOMSON ^7# 2N3715/2N3716 2N3791/2N3792 KflOœ iLiûra !DOS COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715 AND 2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec

2N3716 MOTOROLA

Abstract: BU108 2SA1046 bd139 application note BUY69A BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 2N3716 Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A

Contextual Info: BIPOLAR NPN MESA POWER TRANSISTORS TO-63 4 • h FE min/max < < o m ■c o PEAK VCE sat max VOLTS 'C @>B A A o T0-204 (TO-3) DEVICE TYPE O C /> ILI 1 o > m > PACKAGE AMPS 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5.0/0.5 2N3716* 80 10.0 50-150 1.0/2.0 0.8 5.0/0.5

Contextual Info: 2N3716 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3716+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3716

Contextual Info: 2N3716 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3716X

Contextual Info: 2N3716X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3792

Abstract: 2N3791 2N3715 2N3716
Contextual Info: Inchange Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications

2N3715

Abstract: 2857 transistor 2N3716 1000C
Contextual Info: TECHNICAL DATA MIL-PRF 2N3715 JAN, JTX, JTXV 2N3716 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/408 NPN SILICON HIGH POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N3902

Abstract: T0204 2N5685
Contextual Info: A POWERHOUSE BIPOLAR NPN M ESA POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 r« si VH| % TO-63 • DEVICE TYPE PEAK bvceo 'c VOLTS AMPS hFE min/max ■C@ VCE A V VCE s;M» max •c ü VOLTS A A 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5 0 C.5 2N3716* 80 10.0

Contextual Info: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734