2sC1875
Abstract: 2sc187
Contextual Info: ¿2&M0SPEC HORIZONTAL DEFLECTION TRANSISTORS .designed for use in large screen color deflection cicuits FEATURES: * Collector-Emitter Sustaining Voltage VCE IUI = 500V(Min) * Fast Switching Time t f = 1 .0 u s @ lc= 2.5A * Glass Passivated Collector-Base Junction
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2SD868
Contextual Info: ¿2&M0SPEC HORIZONTAL DEFLECTION POWER TRANSISTORS NPN 2SD868 .specifically designed for use in color TV deflection circuits. FEATURES: * High Voltage: VCBO=1500V * Low Saturation Voltage :VCE sat =5.0V(Typ.) @ lc = 2.0 A * High Speed : t =1.0 us(Max.) @ l- p =2.0 A, IR1 = 0.6A
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BUV48
Abstract: BUV48A BUV-481 BUV481 Power Switching Regulators h/buv48
Contextual Info: /2&M0SPEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching NPN regulators,converters,inverters,motor control system application. BUV48 FEATURES: BUV48A *Collector-Emitter Sustaining VoltageVCEO<SUS = 4 0 0 V Min) ~ BUV48
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buv48-buv48a-buv48buv48a+4buv-481buv481power switching regulatorsh/buv48
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SJE1497
Abstract: Transistor SJE1497
Contextual Info: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE
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sje1497300ma150oc15cfc+1transistor sje1497
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2N6569
Abstract: st 2n3055 2N3055 2N6594
Contextual Info: ¿2&M0SPEC NPN SILICON POWER TRANSISTOR The 2N6569 is a general-purpose, EPIBAS power transistor designed for low voltage amplifier power switching applica tions. FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed
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2SC2908
Contextual Info: ¿2&M0SPEC NPN SILICON POWER TRANSISTORS .designed for use in power amplifier and switching circuits . FEA TU RES: *Collector-Emitter Sustaining Voltage^ ceo sus - 100 V (Min) * Collector-Emitter Saturation Voltage - 5.0 AMPERE SILICON POWER TRANASISTORS
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2sc290810bi-10b2--150vpjlsd |
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2sc2233
Contextual Info: ¿2&M0SPEC NPN SILICON POWER TRANSISTORS NPN .designed for use in TV horizontal deflection output applications 2SC2233 FEATURES: * Low Collector-Emitter Saturation Voltage v cE sat = 1.OV(Max) @ I c=4.0A,Ib=0.4A * DC Current Gain hFE=30-150@ lc= 1.0A * Larg Collector Current Capability
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2N6053
Abstract: 2N6055 2N6054 2N6056
Contextual Info: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A
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BU205
Abstract: BU204
Contextual Info: ¿2&M0SPEC HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 BU205 FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205 * Glassivated Base-Collector Junction
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TIP54
Abstract: TIP51 TIP52 TIP-52 TIP-54 e40V TIP53 switching ic 5 Amper
Contextual Info: ¿2&M0SPEC HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN TIP51 TIP52 TIP53 TIP54 . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V Min *3A R ated Collector Current
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-250-400v200matip51tip52+7tip53tip54-tip51-tip52tip-52tip-54e40vswitching ic 5 amper
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m0spec 2N3055
Abstract: 2N6594 2n3055 collector characteristic curve 2N3055 2N6569 S200 200 Ampere power transistor S200C
Contextual Info: ¿2&M0SPEC PNP SILICON POWER TRANSISTOR PNP 2N6594 The 2N6594 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applica tions. It is a complement to the NPN 2N6569 FEATURES: * Safe Operating Area- Full Power Rating to 40V
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2n65942n65692n30552n6s94+5m0spec 2n30552n3055 collector characteristic curves200200 ampere power transistors200c
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2N5672
Abstract: 2N5671 81TI
Contextual Info: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A
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MJE13070
Abstract: MJE13071 mje1
Contextual Info: ¿2&M0SPEC SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The MJE13070 and MJE13071 transistors are designed for NPN MJE13070 MJE13071 high-voltage , high-speed, power switching in inductive circuits, where fall time is critical.They are particularly suited for line-operated
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mje13070mje13071tc-25mje13070-+1mje1
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m0spec
Abstract: awid MJE2360T MJE2361T
Contextual Info: ¿2&M0SPEC NPN SILICON HIGH-VOLTAGE TRANSISTORS NPN . designed for use general-purpose, high voltage applications MJE2360T MJE2361T requiring high f T FEATURES: *Collector-Emitter Sustaining Voltagev c e o SUS = 350 V (Min) lc=2.5 mA * DC Current GainhFE = 40 (Min.) @ lc = 100 mA- MJE2361T
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