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    2N3055 Search Results

    2N3055 Datasheets (239)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3055
    Comset Semiconductors Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 137.2KB 2
    2N3055
    Micro Commercial Components TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 84.65KB 1
    2N3055
    Microsemi NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 54.25KB 2
    2N3055
    Motorola 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 133.3KB 4
    2N3055
    On Semiconductor General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 82.97KB 4
    2N3055
    On Semiconductor Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 101.88KB 8
    2N3055
    Semelab NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 10.99KB 1
    2N3055
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 10.98KB 1
    2N3055
    STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 46.46KB 4
    2N3055
    STMicroelectronics Complementary power transistors Original PDF 77.39KB 7
    2N3055
    STMicroelectronics Complementary power transistors Original PDF 77.39KB 7
    2N3055
    STMicroelectronics TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 30.68KB 4
    2N3055
    Transys Electronics SILICON PLANAR POWER TRANSISTORS Original PDF 147.27KB 3
    2N3055
    USHA High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 48.28KB 2
    2N3055
    USHA NPN silicon power transistor. 15 Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF 48.94KB 3
    2N3055
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2N3055
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.36KB 5
    2N3055
    API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF 213.7KB 2
    2N3055
    API Electronics Short form transistor data Short Form PDF 83.52KB 1
    2N3055
    API Electronics Short form transistor data Short Form PDF 62.32KB 1
    ...
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    2N3055 Price and Stock

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    onsemi 2N3055G

    Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray
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    onsemi 2N3055AG

    Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray
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    Microchip Technology Inc 2N3055

    Trans GP BJT NPN 70V 15A 6000mW 3-Pin(2+Tab) TO-3 Tray
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    2N3055 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3055A

    Abstract: Vce(sat) MJ2955A
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A


    Original
    2n3055amj2955avce(sat PDF

    2N3055HV

    Abstract: transistor 2N3055hv
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter


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    2n3055hvc-1202n3055hvrev110302dtransistor 2n3055hv PDF

    2n3055

    Abstract: 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab
    Contextual Info: 2N3055/7 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2n3055/7o204aa31-jul-022n3055+42n3055-7equivalent transistor 2n3055jantx 2n30552n3055 semelab PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    2n3055mj2955c-120mj2955rev291201e PDF

    TEXAS 2N3055

    Abstract: 2N3055 transistor 2N3055 2N3055 silicon
    Contextual Info: TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER-AMPLIFIiR APPLICATIONS • 115 W a t 25°C Case T e m p e ra tu re • Max lc of 15 A • Min fhf* of 20 kHz * m e c h a n ica l d a ta ALL JEDEC TO-3 D IM EN SIO N S A N D N O TES ARE APPLICABLE


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    2n3055texas 2n30552n3055 transistor2n3055 silicon PDF

    ZENER 2V7

    Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
    Contextual Info: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60


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    j-2n3055j-bdx18j-bdx54j-bdx62+12j-bdx64j-bdx66j-1n457zener 2v7j 2n30552n3055general purpose 2n3055 transistorsj1n41501n457/a4446bdx66bzx85 c27 PDF

    TIP 2n3055

    Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
    Contextual Info: T Y P E TIP3055 N-P-N SIN G LE-D IFFU SED M ESA SILICON POWER TRAN SISTO R FO R POWEiR A M P L IF IE R A N D H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S P L A S T IC -C A S E R E P L A C E M E N T F O R 2N3055 • 90 Watts at 25°C Case Temperature


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    tip30s52n3055tip 2n3055transistor tip 5530+8tip 147 transistor equivalenttip 122 transistortip 41 transistortransistor tip 3055tip 122 transistor application notestransistor tip 42tip 127 transistor equivalenttransistor tip 127 PDF

    2N3055-6

    Abstract: 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V
    Contextual Info: 2N3055/6 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n3055/6o204aa31-jul-022n3055-6+42n30552n3055 to3jantx 2n3055vceo100v PDF

    2N30S5

    Abstract: 2N305
    Contextual Info: 2N3055A 2N3055A NPN POWER TRANSISTOR High Power Audio, Stepping Motor and Other Linear Applications DIM A B C D E F G H J K I M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION


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    2n3055a2n30s5a2n30s52n305 PDF

    Contextual Info: ., {Jnc, <Se.ml-C.onJiu.ctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 2N3055 NPN SILICON POWER TRANSISTOR •MAXIMUM RATINGS Symbol Riling . Unit V.lu, ^CollMtor-Emlimr Voltao» VCEO 6O


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    2n3055 PDF

    Contextual Info: c^ Jstisii*/ <£s.m.i-(lon.<Licko\ Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high


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    2n3055amj150152n3055mj2955+4mj2955amj15016tq-204aa550ref PDF

    Contextual Info: c3\£. , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3055C N-P-N SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcai. = 25 °C unless otherwise specified) Test conditions Parameter


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    2n3055c100ma200ma PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    ai3312n29062n2906a2n2907+162n2907a2n2913y2n29142n29152n29162n29172n3055e specification2n33502n3904d2n3904dcsm2n28942n36802n2222adcsm2n33472n2993t05 package PDF

    2n3055 malaysia

    Abstract: Mj2955
    Contextual Info: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.


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    2n3055mj2955docid40792n3055 malaysia PDF

    2N3442

    Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790
    Contextual Info: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT *TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0


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    2n3055mj29552n34422n3713+82n37892n37142n37902n37152n37912n37162n5875npn transistor 2n3055 darlington PDF

    2n3055

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
    Contextual Info: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A


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    2n3055mj2955mj2955 2n3055 200 watts amplifiermj2955 300 watts amplifier+52n3055 curvenpn 2n30552n3055 collector characteristic curve2n3055/mj2955mj2955 transistor PDF

    Westinghouse Semiconductor

    Abstract: westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055
    Contextual Info: POüJEREX INC TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This general-purpose tran­


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    2n3055c/2116/dbc/2117westinghouse semiconductor+3westinghouse transistors2n3055 voltage regulatorwestinghouse 2n3055 PDF

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    2n3055mj29552n34422n3713+162n37892n37142n37902n37152n37912n3716pmd10k80pmd17k100mj-6503mj802 equivalent2n6545bdw52bu208abuw35pmd10k40bdx88 PDF

    Contextual Info: 2N3055A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n3055ao204aa18-jun-02 PDF

    MJ15016

    Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016
    Contextual Info: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    2n3055amj15015mj150162n3055+7o-204aa2n3055agmj15015gmj15016g2n3055 npn transistor2n3055a 2n3055mj-15016 PDF

    2N3055

    Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN
    Contextual Info: 2N3055 MJ2955  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series


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    2n3055mj2955mj2955 transistor2n3055 mexico+6pnp transistor 2n3055t 2n30552n3055 mj2955transistor mj2955mj2955 mexico2n3055 japan PDF

    2N3055

    Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
    Contextual Info: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


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    2n3055mj2955jesd97hfe 2n3055+72n3055 st2n3055 schematic diagramst 2n30552n3055 mj29552n3055 audio amplifiermj2955 to-32n3055 amplifier PDF

    2N3055

    Abstract: 2N3055-1 2N3055/1 2n3055 circuit 2n3055 amplifier 2N3055 power amplifier circuit 2N3055 power circuit 2N3055 TO-3 hfe 2n3055 2n3055 IC
    Contextual Info: HIGH POWER TRANSISTOR NPN 2N3055 15A 115W Technical Data …designed for general-purpose switching and amplifier application. F DC Current Gain - h FE = 20 – 70 @ IC = 4Adc F Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc F Excellent Safe Operating Area


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    2n30552n3055-12n3055/12n3055 circuit+62n3055 amplifier2n3055 power amplifier circuit2n3055 power circuit2n3055 to-3hfe 2n30552n3055 ic PDF

    texas 2n3055

    Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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