2N3055C Search Results

Contextual Info: c3\£. , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3055C N-P-N SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcai. = 25 °C unless otherwise specified) Test conditions Parameter

Semelab

Abstract: batch failure test data INTRINSICALLY SAFE PLC jan,tx series semiconductors
Contextual Info: A Short Guide to Quality and Reliability Issues In Semiconductors For High Rel. Applications Issue 1.0 Jan 2002 “It is impossible to test Quality or Reliability into a product. It is, however, quite practical to assess both Quality and Reliability by judicious testing.”

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46

811600

Abstract: BDX10 2N3055C BUW46 2N3055H BUX80 BUW44 BUW45 BUX13 BUX14
Contextual Info: C R I MS O N S E MI CONDUC TOR I N C TT t-_ . _ ~ -— -— - -2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R IN C I 99D 00339 O D lf| E S I M Q U v 7" 6t>-Q/ M U L T IE P IT A X IA L H.V. M E S A A N D B IP L A N A R '- T O -3 continued

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N1720

Abstract: 2n2891 2N3055C 2n3198 2N1718 2N3172 2N3171 2N2632 2n2854 2N2984
Contextual Info: ^alitran_ ^ moj©? ©atoil©© Devices. Inc. S T A N D A R D P A R T L IS T SINGLE DIFFUSED CHIP SELECTIONS MIN. VOLTS 306XC001 306XC092 331XC002 331XC0CI3 55 140 40 BO 140 333XC0D1 345XC0CI1 345XC002 345XC003 349XC001 349XC0C2 140 45

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

2SC2128

Abstract: 2N2773 2N3055C
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)