2N3536 Search Results

2N3536

Contextual Info: 2N3536 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3536 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

2N3536

Contextual Info: 2N3536 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2N3357

Abstract: X0403MF 2N3536 2N3406 2N3668 2n2646 2N3353 2N2646 texas transitron 2N2646p
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Inti Device IntiRect IT 2N2547 Inti Device IntiRect IT 2N2548 Inti Device IntlRect IT 2N2549 Inti Device IntiRect IT 2N2550 Inti Device IntlRect IT 2N2574 2N2575 2N2576 2N2577 2N2578 2N2579 2N2619

C10601

Abstract: 2N2646P S10601 RCA 2N3525 NEC 3P4MH 2N2646 motorola nec 3S4M 2N3106 s20600 TLS106-4
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Inti Device IntiRect IT 2N2547 Inti Device IntiRect IT 2N2548 Inti Device IntlRect IT 2N2549 Inti Device IntiRect IT 2N2550 Inti Device IntlRect IT 2N2574 2N2575 2N2576 2N2577 2N2578 2N2579 2N2619

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of