2N1131L Search Results
2N1131L Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N1131L | Microsemi | BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A | Original | 56.75KB | 3 | ||
| 2N1131L | Microsemi | LOW POWER PNP SILICON TRANSISTOR | Original | 142.15KB | 11 | ||
| 2N1131L | Semelab | Bipolar PNP Device in a Hermetically Sealed TO5 Metal Package | Original | 10.71KB | 1 | ||
| 2N1131LJAN | New England Semiconductor | LOW POWER PNP SILICON TRANSISTOR | Original | 57.53KB | 2 | ||
| 2N1131LJANTX | New England Semiconductor | LOW POWER PNP SILICON TRANSISTOR | Original | 57.53KB | 2 |
2N1131L Price and Stock
Others JAN2N1131LTrans GP BJT PNP 40V 0.6A 3-Pin TO-5 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JAN2N1131L | 9 |
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Get Quote | |||||||
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JAN2N1131L | 7 |
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Buy Now | |||||||
Raytheon JAN2N1131L600 MA, 40 V, PNP, SI, SMALL SIGNAL TRANSISTOR, TO-5 (Also Known As: 2N1131L) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JAN2N1131L | 1,179 |
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Buy Now | |||||||
2N1131L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N1131LContextual Info: 2N1131L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. |
Original |
2n1131lo205aa20-aug-02 | |
2N1132
Abstract: 2N1131 2N1131L 2N1132L
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Original |
mil-prf-19500/1772n11312n1131l2n1132+3 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2c4152c4252c4442c746+16 | |
2N1132
Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp
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Original |
mil-prf-19500/1772n11312n1131l2n1132+7 | |
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Contextual Info: 2N1131L+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
2n1131lfreq50m | |
2N7058
Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
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Original |
vnl005ao-204aa/to-3vnm006avnm005a+12 | |
2N1132Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR |
Original |
mil-prf-19500/1772n11312n1131l2n1132+2 | |
2N1131
Abstract: 2n1132 6840
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Original |
mil-prf-19500/1772n11312n1131l2n1132+3 | |
2N1131
Abstract: 2N1131L 2N1132 2N1132L tl 451 177G
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Original |
mil-prf-19500/177gmil-prf-19500/177f2n11312n1131l+5 | |
2n1131Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR |
Original |
mil-prf-19500/1772n11312n1131l2n1132+2 | |
2N1131
Abstract: 2N1132 2N1131L 2N1132L MIL-PRF19500
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Original |
mil-prf-19500/177fmil-s-19500/177e2n11312n1131l+4 | |
2n1131
Abstract: 2N1132
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Original |
mil-prf-19500/1772n11312n1131l2n1132+2 |