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2N1132L Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N1132L		Microsemi	BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A	Original	PDF	56.75KB	3
2N1132L		Microsemi	LOW POWER PNP SILICON TRANSISTOR	Original	PDF	142.15KB	11
2N1132LJAN		New England Semiconductor	LOW POWER PNP SILICON TRANSISTOR	Original	PDF	57.53KB	2
2N1132LJANTX		New England Semiconductor	LOW POWER PNP SILICON TRANSISTOR	Original	PDF	57.53KB	2

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Raytheon


Raytheon 2N1132LJAN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N1132LJAN		4			1 $71.20 10 $67.64 100 $67.64 1000 $67.64 10000 $67.64	Buy Now

2N1132L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N1132 Abstract: 2N1131 2N1131L 2N1132L Contextual Info: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current	Original	mil-prf-19500/177 2n1131 2n1131l 2n1132 +32n1132l 2n1311l 2n1312l	PDF
2N1132 Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp Contextual Info: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current	Original	mil-prf-19500/177 2n1131 2n1131l 2n1132 +72n1132l 2n1311l 2n1312l 2n1311 ic4050 2n1312 low power pnp	PDF
Contextual Info: 2N1132L+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n1132l freq60m	PDF
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	vnl005a o-204aa/to-3 vnm006a vnm005a +122n1717 2n1890 o-205ad/to-39 2n7058 ytf830 2n7057 2n769 ytf840 2n1565 vnp006a 2sa1091 2n7066	PDF
2N1132 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR	Original	mil-prf-19500/177 2n1131 2n1131l 2n1132 +22n1132l t4-lds-0187	PDF
2N1131 Abstract: 2n1132 6840 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICON TRANSISTOR	Original	mil-prf-19500/177 2n1131 2n1131l 2n1132 +32n1132l o-39nd 6840	PDF
2N1131 Abstract: 2N1131L 2N1132 2N1132L tl 451 177G Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 July 2009. MIL-PRF-19500/177G 6 April 2009 SUPERSEDING MIL-PRF-19500/177F 4 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER	Original	mil-prf-19500/177g mil-prf-19500/177f 2n1131 2n1131l +52n1132 2n1132l mil-prf-19500 tl 451 177g	PDF
2n1131 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR	Original	mil-prf-19500/177 2n1131 2n1131l 2n1132 +22n1132l t4-lds-0187	PDF
2N1131 Abstract: 2N1132 2N1131L 2N1132L MIL-PRF19500 Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/177F 4 August 1999 SUPERSEDING MIL-S-19500/177E 8 February 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER	Original	mil-prf-19500/177f mil-s-19500/177e 2n1131 2n1131l +42n1132 2n1132l mil-prf-19500 mil-prf19500	PDF
2n1131 Abstract: 2N1132 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR	Original	mil-prf-19500/177 2n1131 2n1131l 2n1132 +22n1132l t4-lds-0187	PDF