FREQ60M Search Results
FREQ60M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N2853-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)5.0 |
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2N2853-2 Freq60MÃ | |
Contextual Info: PG1382 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)10 |
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PG1382 Freq60MÃ | |
2N3025Contextual Info: 2N3025 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175# I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)3.0 |
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2N3025 Freq60M | |
Contextual Info: SDT4944 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)275 V(BR)CBO (V)300 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SDT4944 Freq60M | |
Contextual Info: 1711-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq60M | |
Contextual Info: 1717-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq60M | |
Contextual Info: 1711-1402 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)150 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq60M | |
Contextual Info: CEN-U10 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20m |
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CEN-U10 Freq60M | |
Contextual Info: 2N2852-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)1.0 |
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2N2852-2 Freq60MÃ | |
Contextual Info: 2SD1977 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SD1977 Freq60M | |
Contextual Info: 2SC3284 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)14 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SC3284 Freq60M | |
Contextual Info: BF723 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250ã V(BR)CBO (V)250 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BF723 Freq60M | |
Contextual Info: UPT835 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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UPT835 Freq60M | |
Contextual Info: AP1088 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)130ö V(BR)CBO (V)175 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) |
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AP1088 Freq60M | |
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Contextual Info: AP1057 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) |
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AP1057 Freq60M | |
Contextual Info: MPQ3799 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)2.0 Minimum Operating Temp (øC)-65õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n |
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MPQ3799 Freq60M | |
Contextual Info: B148002 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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B148002 Freq60M time200n eq60M | |
Contextual Info: 2N2849-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)1.0 |
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2N2849-2 Freq60MÃ | |
Contextual Info: PG1387 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0 |
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PG1387 Freq60MÃ | |
Contextual Info: 2SA1077 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SA1077 Freq60M time150nà | |
Contextual Info: SDT4941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)225 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SDT4941 Freq60M | |
Contextual Info: PG2389 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0 |
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PG2389 Freq60MÃ | |
Contextual Info: AP1116 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)90ö V(BR)CBO (V)140 I(C) Max. (A)20 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) |
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AP1116 Freq60M | |
Contextual Info: BF422 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)800m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)20m |
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BF422 Freq60M |