2SA1091 Search Results

a1091 transistor

Abstract: a1091 R transistor 2SA1091 A1091 vqe 14 display transistor a1091 2SC2551
Contextual Info: 2SA1091 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 091 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS . 5.1 M AX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • •

Contextual Info: 2SC2551 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR AND DRIVER APPLICATIONS Package: TO-92 * Complement To 2SA1091 * Collector-Base Voltage VCBO=300v ABSOLUTE MAXIMUM RATINGS #t T u r t l e

2SA1091

Abstract: 2SC2551
Contextual Info: 2SA1091 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SA1091 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = −300 V, VCEO = −300 V

2SA1091

Abstract: 2SC2551
Contextual Info: 2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: | e 2SA1091 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATION Package; TO-92 * Complement to 2SC2551 • Collector-Emitter Voltage VCEO=-300V Symbol R ating Unit Collector-Base Voltage

2SC2551

Abstract: 300V NPN transistor to-92 2SA1091
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 2SC2551 Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High voltage z Low saturation voltage z Small collector output capacitance z Complementary to 2SA1091 2. COLLECTOR

2SC2551

Abstract: 2SA109 2SC2551-0 2SA1091 2SC2551-O 2SC25
Contextual Info: 2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Voltage  Low Saturation Voltage  Small Collector Output Capacitance  Complementary to 2SA1091

a1091 transistor

Abstract: A1091 2SA1091 a1091 R transistor sc 1091 transistor a1091 2sa1091 transistor 2SC2551
Contextual Info: TO SH IBA 2SA1091 2 S A 1 091 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS . 5.1 M A X . CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • •

2SC2551

Contextual Info: 2SC2551 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: TOSHIBA 2SA1091 2 S A 1 091 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS . 5.1 M AX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • •

2SA1091

Abstract: nixie tube driver 2SC2551 2sa1091 transistor
Contextual Info: 2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SA1091

Abstract: 2SC2551
Contextual Info: 2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • • Unit: mm High voltage: VCBO = −300 V, VCEO = −300 V

2SA1091

Abstract: 2SC2551
Contextual Info: 2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: 2SA1091 TOSHIBA T O SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 Q 9 1 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS .5.1 M AX. C ATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS •

TA8659AN

Abstract: toshiba TA8615N TA8601BN TA8655an ta8615 7644BP ta7644bp ta8615n ta8659a TA7622AP
Contextual Info: TOSHIBA 5. Video/Chroma Systems 5-1 ICs fo r V id e o /C h ro m a \F u n c tio n Video Process­ ing Type NoN ^ Chroma Processing NTSC PA L SECAM Deflection System System Switch Package Remarks TA7608CP •■ ■■ - - - - NTSC Video/Chroma DIP 28 TA 7644BP

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1091

Abstract: 2SC2551 SC43
Contextual Info: 2SC2551 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2551 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Contextual Info: 2SC2551 TO SHIBA 2SC2551 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGHT VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS . 5.1 M AX.

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

2SC367

Abstract: 2SC372
Contextual Info: 7. INDUSTRIAL APPLICATIONS TO-92 —3 O IX X H CD >• hFE Type No. Application NPN | PNP f T TYP. v CE sat) M A X - VCEO >C PC V CE •c (V) (mA) (mW) (V) (mA) (V) <C ■b (mA) (mA) (MHz) Cob TYP. V qe >c f=1MHz (V) (mA) (pF) SW Time TYP. VCB (V) ton tstg

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g