2SC367 Search Results

2SC367 Datasheets (124)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC367	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	71.89KB	1
2SC367	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	90.44KB	1
2SC367	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	36.41KB	1
2SC367	Unknown	Cross Reference Datasheet	Scan	PDF	33.54KB	1
2SC367	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.82KB	1
2SC367	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	39.42KB	1
2SC367	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	98.74KB	1
2SC367	Unknown	Vintage Transistor Datasheets	Scan	PDF	51.84KB	1
2SC367	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	104.71KB	2
2SC367	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	200.99KB	2
2SC3670	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1430	Original	PDF	119.06KB	4
2SC3670	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	32.55KB	1
2SC3670	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.59KB	2

2SC3670	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.34KB	1
2SC3670	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	45.08KB	1
2SC3670	Toshiba	Silicon NPN transistor for strobo flash applications and medium power amplifier applications	Scan	PDF	180.5KB	3
2SC3670	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF	180.84KB	3
2SC3670A	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670A	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	99.91KB	2

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Bristol Electronics	2SC367		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SC3675 INSTOCK
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Chip 1 Exchange	2SC3675		2,317			1 - 10 - 100 - 1000 - 10000 -	Get Quote
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2SC367 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage	OCR Scan	2sc3671 q55-q0s 10tna	PDF
2SC3678 Contextual Info: Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base	Original	2sc3678	PDF
2SC3678 Abstract: transistor ,12v ,Ic 1A ,NPN transistor 12v 1A NPN transistor npn 12V 1A Collector Current Contextual Info: SavantIC Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage switching transistor APPLICATIONS ·Switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2sc3678 transistor ,12v ,ic 1a ,npn transistor 12v 1a npn transistor npn 12v 1a collector current	PDF
2SD2334 Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062 Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187	OCR Scan	2sd2174 2sd2175 2sd2176 2sd2177 +152sd2185 2sd2186 2sd2187 2sd2188 2sd2189 2sd2190 2sd2334 2sc4814 2sd2076 2216y 2sd1546 2sd1930 2sd1755 2sc2562 2sc4062	PDF
Contextual Info: Ordering num ber: EN 1800E _ 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications A p p licatio n s • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focus applications.	OCR Scan	1800e 2sc3675 2010c t0220ab +18-9202/4237at/3195ki	PDF
2-7D101A Abstract: 2SC3673 Contextual Info: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 MAX. 2.7MAX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : VCE (sat) -0.5V (Max.) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2sc3673 2-7d101a	PDF
2-7D101A Abstract: 2SA1432 2SC3672 Contextual Info: TOSHIBA 2SC3672 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3672 HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • • • High Voltage : V0BO-3OOV, V£ e o -300V	OCR Scan	2sc3672 2sa1432 2-7d101a	PDF
2sc3714 Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678 Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714	OCR Scan	2sc3671 2sc3672 2sc3673 2sc3675 +112sc3676 2sc3678 2sc3679 2s00mhz sc-59a 2sc3707 2sc3714 2sc3691 2sc3702 2sc3692 g1508	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS -iS-, 7.1 M A X • • High DC Current Gain and Excellent hjpE Linearity hjrE (1) —140—600	OCR Scan	2sc3670 2-7d101a	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TO SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM PO W ER AM PLIFIER APPLICATIONS • 7.1 M AX High DC Current Gain and Excellent hpg Linearity : hpE (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)	OCR Scan	2sc3670 961001eaa2 2-7d101a	PDF
2SC3480 Abstract: 2SC3479 2SC3675 2SC3676 Contextual Info: 2SC3675 2 SCI 7 5 5 2 SCI 7 5 6 2 SCI 7 5 7 2SC367 6 2 SB 1 0 3 7 2 SDÌ 4 5 9 2 SAI 0 1 1 2SC2344 2 SD3 8 6A 2 SD3 8 7A 2SD 38 6 2 SD3 8 7 2 SD 8 23 2 SDÌ 1 5 9 2SC 3 18 9 2SC3173 2SC 3 174 2 SC 3 175 2SC 3176 2SC3589 2SC3590 2SC3591 10220 10220 10220 10220	OCR Scan	2sc3675 2sc1755 2sc1756 2sc1757 +82sc3676 2sb1037 2sd1459 2sa1011 2sc2344 2sd386a 2sc3480 2sc3479	PDF
2-7D101A Abstract: 2SC3671 Contextual Info: TOSHIBA 2SC3671 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 STOROBE FLASH APPLICATIONS U nit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS 7.1 M AX. • High DC Current Gain and Excellent h p g Linearity : hpE (i) = 140~450 : h F E ( 2) = 70 (Min.)	OCR Scan	2sc3671 cycles30 961001eaa2 2-7d101a	PDF
2SC3676 Abstract: ITR05795 ITR05797 ITR05798 VITR05796 Contextual Info: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.	Original	enn1801e 2sc3676 00v/300ma 2010c +5o-220ab itr05795 itr05797 itr05798 vitr05796	PDF
2-7D101A Abstract: 2SA1432 2SC3672 C3672 Display Nixie Contextual Info: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V	Original	2sc3672 2sa1432 2-7d101a c3672 +1display nixie	PDF

2-7D101A Abstract: 2SC3673 C3673 Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain : hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2sc3673 2-7d101a c3673	PDF
C3671 Contextual Info: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)	Original	2sc3671 150hiba c3671	PDF
2SC3679 Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max	Original	2sc3679 pulse10 100max 800min +375typ 700ma mt-100	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hEE Linearity hEE (1) —140—600 ^FE (2) “ 70 (Min.), 200 (Typ.)	OCR Scan	2sc3670 2-7d101a	PDF
2-7D101A Abstract: 2SC3673 C3673 Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2sc3673 2-7d101a c3673	PDF
High-Voltage Amplifiers Abstract: 2SC3675 Contextual Info: Ordering num ber: EN1800E 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focuB applications. Features	OCR Scan	en1800e high-voltage amplifiers 2sc3675	PDF
2SC3679 Abstract: transistor applications 2sc3679 transistor Contextual Info: Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base	Original	2sc3679 transistor applications 2sc3679 transistor	PDF
2-7D101A Abstract: 2SC3671 Contextual Info: TOSHIBA 2SC3671 2SC3671 TO SHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • 7.1 MAX. High DC Current Gain and Excellent hpg Linearity : ^FE (1) —140—450 : hFE(2) = 70 (Min.)	OCR Scan	2sc3671 cycled30 961001eaa2 2-7d101a	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hpE Linearity : ^FE (1) —140—600 : hFE( 2 ) = ?0 (Min.), 200 (Typ.)	OCR Scan	2sc3670 961001eaa2 2-7d101a	PDF
2-7D101A Abstract: 2SC3673 Contextual Info: TO SH IBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 M A X • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sc3673 2-7d101a	PDF

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2SC367 Datasheets (124)

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