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Omega Engineering


Omega Engineering OM-CP-PULSE101A PULSE INPUT DATA LOGGER - Bulk (Alt: OM-CP-PULSE101A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	OM-CP-PULSE101A	Bulk			1	1 $159.55 10 $159.55 100 $159.55 1000 $159.55 10000 $159.55	Get Quote
Newark	OM-CP-PULSE101A	Bulk			1	1 $159.55 10 $159.55 100 $159.55 1000 $159.55 10000 $159.55	Buy Now

PULSE10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30	Original	2sc4073 pulse10 o220f 100max +3400min 10typ 30typ	PDF
300V regulator Abstract: 2SC5271 FM20 Contextual Info: 2SC5271 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A 1.0max Tj 150 °C VBE(sat) IC=2.5A, IB=0.5A 1.5max V –55 to +150	Original	2sc5271 pulse10 10typ 45typ +6o220f 15min 100max 200min 300v regulator fm20	PDF
2SC4518 Abstract: 2SC4518A FM20 Contextual Info: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE	Original	2sc4518/4518a 100max o220f 2sc4518 +52sc4518a 550min pulse10 50typ fm20	PDF
2SD2141 Abstract: 2SD2141 equivalent FM20 DMS-10 Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA	Original	2sd2141 pulse10 10max 20max +91500min 20typ 95typ o220f 150x150x2 100x100x2 2sd2141 equivalent fm20 dms-10	PDF
2SD2141 equivalent Abstract: 2SD2141 FM20 DMS-10 Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA	Original	2sd2141 pulse10 10max 20max +81500min 20typ 95typ o220f 120ma 2sd2141 equivalent fm20 dms-10	PDF
2SC3679 Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max	Original	2sc3679 pulse10 100max 800min +375typ 700ma mt-100	PDF
2SC4073 Abstract: FM20 SE-05 Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2	Original	2sc4073 pulse10 100max 400min +510typ 30typ o220f fm20 se-05	PDF
2SC5287 Abstract: transistor 2SC5287 DSA0016511 Contextual Info: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25	Original	2sc5287 mt-100 100max pulse10 +4550min 50typ transistor 2sc5287 dsa0016511	PDF
2SC4300 Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A	Original	2sc4300 100max 800min pulse10 +275typ fm100	PDF
2SD2045 Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max	Original	2sd2045 10max 120min pulse10 +32000min 50typ 70typ	PDF
2SC5130 Abstract: FM20 Contextual Info: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2	Original	2sc5130 100max 10max 400min +5pulse10 20typ 30typ o220f fm20	PDF
2SD1769 Contextual Info: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)	Original	2sd1769 mt-25 10max 20max +2pulse10 100typ	PDF
2SB1258 Abstract: 2SD1785 FM20 IE1A Contextual Info: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)	Original	2sd1785 2sb1258 pulse10 10max +7120min 2000min 100typ 70typ o220f fm20 ie1a	PDF
Contextual Info: OM-CP-PULSE101 Counter/Totalizer/ Event Datalogger Part of the NOMAD Family OM-CP-PULSE101 199 $ Basic Unit Lifetime MADE IN USA ߜ Programmable Engineering Units ߜ Programmable Scale Factor/Offset Value ߜ Memory: 21,845 Readings ߜ Memory Wrap Around	Original	om-cp-pulse101 rs-232c 95/98/nt/2000/xp 36mmh +256mmw 16mmd	PDF

2SC3679 Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A	Original	2sc3679 pulse10 100max 800min +275typ mt-100	PDF
2SC4300 Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A	Original	2sc4300 100max 800min pulse10 +375typ 700ma fm100	PDF
2SD1769 Contextual Info: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)	Original	2sd1769 mt-25 10max 20max +2pulse10 100typ	PDF
2SC5287 Contextual Info: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25	Original	2sc5287 mt-100 100max pulse10 +2550min 50typ	PDF
2SD2045 Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max	Original	2sd2045 10max 120min pulse10 +32000min 50typ 70typ	PDF
2SC5130 Abstract: FM20 Contextual Info: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 2SC5130 Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2	Original	2sc5130 100max 10max 400min +5pulse10 20typ 30typ o220f fm20	PDF
2SC5271 Abstract: 300V regulator FM20 Contextual Info: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A	Original	2sc5271 pulse10 100max 200min +6o220f 15min 10typ 45typ 300v regulator fm20	PDF
transistor chn 943 Abstract: CHN 943 89/transistor chn 943 BR17 Contextual Info: FM0+ Family 32-BIT MICROCONTROLLER Timer Part PERIPHERAL MANUAL For the information for microcontroller supports, see the following web site. http://www.spansion.com/support/microcontrollers/ Publication Number S6E1A1_MN710-00002 CONFIDENTIAL Revision 1.0	Original	32-bit mn710-00002 mn710-00002-1v0-e transistor chn 943 +3chn 943 89/transistor chn 943 br17	PDF
STW6N95K5 Abstract: STP6N95K5 6N95K5 STD6N95K5 STF6N95K5 6N95K Contextual Info: STD6N95K5, STF6N95K5 STP6N95K5, STW6N95K5 N-channel 950 V, 1 Ω, 9 A TO-220, TO-220FP, TO-247, DPAK Zener-protected SuperMESH5 Power MOSFET Features Type VDSS RDS on max. STD6N95K5 STF6N95K5 STP6N95K5 950 V < 1.25 Ω STW6N95K5 ID PW 9A 90 W 9A (1) 9A	Original	std6n95k5 stf6n95k5 stp6n95k5 stw6n95k5 +5o-220 o-220fp o-247 6n95k5 6n95k	PDF
2SC4662 Abstract: FM20 Contextual Info: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A	Original	2sc4662 100max 400min 20typ +430typ pulse10 o220f fm20	PDF

PULSE10 Search Results

PULSE10 Price and Stock

Omega Engineering OM-CP-PULSE101A

PULSE10 Datasheets Context Search

300V regulator

2SC4518

2SD2141

2SD2141 equivalent

2SC3679

2SC4073

2SC5287

2SC4300

2SD2045

2SC5130

2SD1769

2SB1258

2SC3679

2SC4300

2SD1769

2SC5287

2SD2045

2SC5130

2SC5271

transistor chn 943

STW6N95K5

2SC4662