20MAX Search Results

ct60am

Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V

TQFP176

Contextual Info: TQFP176-P-2424-0.50 1, 25TYP ro en O O, 1 4 5 í8; 045 o CJI ro ro ro en o -j^ i+ o o o o ro i+ i+ o ro o o ro ro 1 + pp □o -i^cn o o e o 00 o 0, 10±0, 05 1, 025±0, 05 1, 20MAX CJI 24, 00±0, 1 26, 0 0 ± 0 , 2 ö" ro CD CD Uniti m ~n

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

DUP3

Abstract: 40mhz telephone transmitter rf traNsmitter receiver 40mhz DRU5 RF output cordless phone
Contextual Info: TYPE Duplexers for Cordless Phone DRU5 DUP3 コードレス電話用デュプレクサ TYPE DRU5, DUP3 DUP3 For US, Asia DRU5 For US, Asia 11.0Max. 8.8Max. 6.0 8Max. 3.5 12Max. 20Max. 7.6 25.1 19.3 28.2Max. 8.8 φ0.7 2.7 5.6 φ0.7 Unit: mm (Unit: mm) Features

TO-3PL

Abstract: PRSS0004ZC-A
Contextual Info: Previous Code T3PL RENESAS Code PRSS0004ZC-A MASS[Typ.] 9.8g 20Max Unit: mm 5 6 2 26 φ3.2 1 2 20.6Min JEITA Package Code ⎯ 2.5 Package Name TO-3PL* 1 0.5 5.45 5.45 4.0 3

Contextual Info: 14/25 001-01 / 20030224 / e93_tf.fm EMC Components TF Series Common Mode Choke Coils(Line Filters) for AC Power Supply Toroidal Core Type TF2527VU(VERTICAL TYPE WITH TERMINAL BASE) TYPE SHAPES AND DIMENSIONS/CIRCUIT DIAGRAM 20max. ød (15) 1 4 2 3 TF2527VU-302Y3R0-01

Contextual Info: TYPE 20 6DFSC E8TO N O om Dielectric Fillers TYPE 6DFSC 4 Pole Type Frequency Range: 8 0 0 -1 500MHz Temperature Range: - 40°C + 85°C 20Max. JTU Tolerance: ±0.5 (Unit: mm) 6.5 10.7 * : Depends on Center Frequency, Characteristics fétìtìig 6DFSC-836E-12T

MN638S

Abstract: ic 3A hfe 500
Contextual Info: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min

TFBGA56

Contextual Info: 1. 20MAX - M O . 10 ISI •ij-ULum-u uiu u u u u u — h o . 10ISI OOOOiOO oooolooöo o o _ o _ o {o _ o _ o o _ OOÒOOÓOO oooo|oooo o o o 0 : 6 o o -e 0 0 -e -o - 10780] 104 0 ] 10760] 1

CT60AM-18F

Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
Contextual Info: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V

2SD1769

Contextual Info: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)

Contextual Info: TYPE 6DFSC Dielectric Fitters 7 TYPE 6DFSC 4 Pole Type Frequency Range: 800-1500M Hz Temperature Range: -25 C to +85°C 20Max - Characteristics 6DFSC-836E-11T STANDARD DEVICES SELECTION GUIDE The Part Numbers shown in the table below are standard devices which are

DIODE 10D2

Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
Contextual Info: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V

Contextual Info: P—TFBGA85—0710—0.80DZ U n it mn 1. 20MAX. [7701 o •0. g6±0. 04 i/i W £ tJ OB. C o Ò o o o o H O O o o o o _o _o o ö o o o o o o o o o o / o o o o o o o o o o 'ö o o o o <p io 'o lo _ fö !o |o :o |o i o o o C) C) o <p O O D o o o o o _eo "o o '

Contextual Info: P—TFBGA48—0608—0.80AZ Uniti mn . 20MAX •4— j, 33±0, 05 ITÖÖ1 ro~4gi ipm oooôôè 1 3X 0 O O O O OOOiOOO _o oplo_o_eo o o]o Ö o' sa ooolooo ooo|ooe- o o o io o e £2 INDEX r Jan.2004

CT60AM-18F

Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
Contextual Info: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.

Contextual Info: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A

b514

Abstract: DNQ10 DNQ10JS
Contextual Info: Power Brushless Motor DNQ10JS Standard Dimensions mm 28 23.3 5.2 3.2 R 5M 28 23.3 IN B51.4 B20 28 23.3 61MAX 4-B4.5 29 B23.7MAX 28 23.3 (15) 5.5 20MAX Component area Typical Data Model DNQ10JS Rated Rated Voltage Speed (V) (min-1) (gf á cm) (mN á m) (mA)

2SD2141

Contextual Info: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)

z308

Contextual Info: P—TFBGA85—0710—0.80CZ U n it mn 1. 20MAX o -D. 33±0. 04 W £ tJ O B . OO oo oooo OOOO o o o o o C H O O O p o o cp ooooioooo o_o_o olo_o o_eo ö o"ö[ö o o o' ooooloooo oooo|oooo oooopoo /o o o o|o o-e-eo o i -e-e- Apr .2004

IGBT tail time

Abstract: IGBT 900v 60a CT90AM-18 MJ 545 transistor
Contextual Info: MITSUBISHI IGBT MITSUBISHI NchNch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V

Contextual Info: Fixed Inductors 固定电感器 8RHT2 Inductance Range: 1.0~1000µH 电感值范围：1.0~1000µH FEATURES／特点 DIMENSIONS／尺寸 6.35 12.7 0±2° 12.5 9.5Max. 3.85 18 20Max. 11Max. 32.3Max. Fixed form ø0.61 ø4 5 (Unit: mm) (单位：毫米) 12.7

IGBT CT60AM

Abstract: CT60AM-18F
Contextual Info: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V