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    CT60AM18F Search Results

    CT60AM18F Datasheets (6)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CT60AM-18F
    Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF 87.22KB 4
    CT60AM-18F
    Powerex INSULATED GATE BIPOLAR TRANSISTOR Original PDF 23.16KB 2
    CT60AM-18F
    Renesas Technology Insulated Gate Bipolar Transistor Original PDF 171.79KB 6
    CT60AM-18F
    Renesas Technology Insulated Gate Bipolar Transistor Original PDF 115.35KB 5
    CT60AM-18F
    Mitsubishi IGBT for Microwave Oven, TO-3PL Scan PDF 81.12KB 2
    CT60AM-18F-AD
    Renesas Technology Insulated Gate Bipolar Transistor Original PDF 171.81KB 6
    SF Impression Pixel

    CT60AM18F Price and Stock

    Select Manufacturer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CT60AM-18F 4
    • 1 $6.30
    • 10 $4.20
    • 100 $4.20
    • 1000 $4.20
    • 10000 $4.20
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CT60AM18F 4
    • 1 $6.30
    • 10 $4.20
    • 100 $4.20
    • 1000 $4.20
    • 10000 $4.20
    Buy Now

    Renesas Electronics Corporation CT60AM-18F#G02

    N-Channel IGBT, 900V, 60A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics CT60AM-18F#G02 9,469 1
    • 1 -
    • 10 -
    • 100 $5.28
    • 1000 $4.73
    • 10000 $4.45
    Buy Now

    CT60AM18F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    CT60AM-18F

    Abstract: IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A
    Contextual Info: CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 Previous: MEJ02G0023-0101 Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)


    Original
    ct60am-18frej03g1374-0200mej02g0023-0101prss0004zc-a+3igbt tail timect60am-18f-admicrowave semiconductors corp PDF

    CT60AM-18F

    Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
    Contextual Info: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V


    Original
    ct60am-18f20maxct60am igbtct60am18f+4igbt ct60amigbt 900v 60aigbt 60aigbt tail time PDF

    IGBT 900v 60a

    Abstract: CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am
    Contextual Info: MITSUBISHI Neh IGBT •§;> >>•+. :W> ^ ,^-s^ CT60AM-18F » ft ftud sxluö\ecl 1 * p- "TVi'S 's JJi, \\flVrts &T s°^ INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING • V c e s . 900V


    OCR Scan
    ct60am-18f00v/jis-20a/jisigbt 900v 60a+4igbt 60act60am igbtigbt tail timect60am PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original
    2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj PDF

    DIODE 10D2

    Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
    Contextual Info: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V


    Original
    ct60am-18f20maxdiode 10d2102 transistor+6bipolar transistordiode 10d1igbt 900v 60aigbt tail timeigbt ct60am10d1 PDF

    CT60AM-18F

    Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
    Contextual Info: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.


    Original
    ct60am-18f20maxigbt 900v 60act60am18f+2ct60amdsa007480 PDF

    Contextual Info: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A


    OCR Scan
    ct60am-18f20max PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    CT60AM18F

    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    ct60am18f PDF

    CT60AM-18F

    Abstract: CT60AM-18F-AD PRSS0004ZC-A ct60am18f
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    ct60am-18fct60am-18f-adprss0004zc-act60am18f PDF

    IGBT CT60AM

    Abstract: CT60AM-18F
    Contextual Info: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V


    OCR Scan
    ct60am-18f20maxigbt ct60am PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original
    24empbrc124etpbrc143etpbrc144ecm+16cr3km-12fs10km-6fs10vs-6fs16km-6fs16vs-6hat3017r1002ds4008zb2sc 9012mp 1009 es2sc 805020aaj-8h6020v42sc14172sc 8550cr3as PDF

    CT60AM-18F

    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    ct60am-18f PDF