2SC5998
Abstract: 2SC5998YC
Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj
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TL 2262
Abstract: SC 2262 2SC5998 SC-59A
Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz
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2sc5998rej03g0169-0101plsp0003zb-atl 2262+2sc 2262sc-59a
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TL 2262
Abstract: 2217-33 SC 2262 tl 2262 am 2SC5998 SC-59A 01273
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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tl 22622217-33sc 2262tl 2262 am+32sc5998sc-59a01273
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24empbrc124etpbrc143etpbrc144ecm+16cr3km-12fs10km-6fs10vs-6fs16km-6fs16vs-6hat3017r1002ds4008zb2sc 9012mp 1009 es2sc 805020aaj-8h6020v42sc14172sc 8550cr3as
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