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    2SC5998YC Search Results

    2SC5998YC Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC5998YC
    		Renesas Technology Silicon NPN Epitaxial High Frequency Medium Power Amplifier Original PDF 96.42KB 11
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    2SC5998YC Price and Stock

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    Rochester Electronics LLC 2SC5998YC-TL-E

    RF TRANS NPN 5V 10.5GHZ 3-MPAK
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    DigiKey 2SC5998YC-TL-E Bulk 13,734 357
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    Renesas Electronics Corporation 2SC5998YC-TL-E

    Trans GP BJT NPN 5V 0.5A 700mW 3-Pin MPAK T/R
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    Verical 2SC5998YC-TL-E 13,734 447
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    Rochester Electronics 2SC5998YC-TL-E 13,734 1
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    2SC5998YC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5998

    Abstract: 2SC5998YC
    Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz


    Original     		2SC5998 REJ03G0169-0100Z 2SC5998 2SC5998YC PDF

    TL 2262

    Abstract: 2217-33 SC 2262 tl 2262 am 2SC5998 SC-59A 01273
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TL 2262

    Abstract: SC 2262 2SC5998 SC-59A
    Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz


    Original     		2SC5998 REJ03G0169-0101 PLSP0003ZB-A TL 2262 SC 2262 2SC5998 SC-59A PDF