150X150X2 Search Results

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

2SD234

Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Contextual Info: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t

STR20005

Abstract: STR20000 Series RU3M STR20000 sanken str 45
Contextual Info: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability

STR2012

Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
Contextual Info: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability

2SD553

Abstract: Toshiba 2sd553
Contextual Info: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.

2SA1668

Abstract: 2SA1667 equivalent for 2sa1668 FM20
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SA1488

Abstract: 2SA1488A FM20 2SC3851 A DSA0016503
Contextual Info: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=–10V, f=1MHz Tstg VEB=–6V µA V –80

Contextual Info: 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V BR CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz

2SA1667

Abstract: 2SA1668 FM20 22SA1
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)

2sc4024

Abstract: VEBO-15V M.P transistor FM20
Contextual Info: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SC4153

Abstract: 2SC4153 equivalent FM20 100X100X2
Contextual Info: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C

Contextual Info: 多口継手 鉛カドミウムの含有量を 削減した溶融亜鉛めっき 技術を開発 ¬ 印 管継手 ねじ接続による中小口径鋼管用の管継手で、JIS B 2301に「ねじ込み式可鍛鋳鉄製管継手」として規定 されている継手です。JIS規格外品も一部製造しております。

Contextual Info: カタログ シール剤付き（ウィズシール） （ウィズシール 管継手 WS 継手 印 シール剤付き（ウィズシール） （ウィズシール 管継手 WS 継手 印 適用管種：JIS G 3452 配管用炭素鋼鋼管 JIS G 3442 水配管用亜鉛めっき鋼管

2SC4064

Contextual Info: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB

2SB1257

Abstract: 2SD2014 FM20 nk co DSA0016505
Contextual Info: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max

2SC4495

Abstract: FM20
Contextual Info: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz

2SC4153

Abstract: FM20
Contextual Info: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C

2SD2014

Abstract: 2SB1257 FM20 S8010
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SD2015

Abstract: FM20
Contextual Info: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C

sk a 3120c

Abstract: 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A
Contextual Info: Bulletin No I01 EC0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the

IC SI-8050S 5V 3A

Abstract: sk 3090c sk 8050S sk a 3120c A8180 SI-3242P toroidal transformer 22v td 3001N 3522V 3922v
Contextual Info: Bulletin No I01 EC0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the