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    2SD234 Search Results

    2SD234 Datasheets (101)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD234
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 46.49KB 1
    2sd234
    Micro Electronics TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-220 Scan PDF 78.95KB 1
    2SD234
    Micro Electronics Semiconductor Device Data Book Scan PDF 33.28KB 1
    2SD234
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.21KB 1
    2SD234
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52KB 1
    2SD234
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 165.2KB 1
    2SD234
    Unknown Transistor Replacements Scan PDF 78.3KB 1
    2SD234
    Unknown Japanese Transistor Cross References (2S) Scan PDF 40.4KB 1
    2SD234
    Unknown Cross Reference Datasheet Scan PDF 38.3KB 1
    2SD234
    Unknown Transistor Replacements Scan PDF 75.39KB 1
    2SD234
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 113.29KB 1
    2SD234
    Unknown Transistor Substitution Data Book 1993 Scan PDF 42.36KB 1
    2SD234
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 87.66KB 1
    2SD234
    Unknown The Japanese Transistor Manual 1981 Scan PDF 104.53KB 2
    2SD234
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 38.83KB 1
    2SD234
    Semico Power Transistors Scan PDF 757.33KB 8
    2SD234
    Toshiba Silicon NPN Diffused Junction Trasnsistor Scan PDF 46.81KB 1
    2SD234
    Toshiba Japanese Transistor Data Book Scan PDF 113.97KB 4
    2SD2340
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SD2340
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.47KB 1

    2SD234 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB434

    Abstract: 2SD234
    Contextual Info: SavantIC Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION Fig.1 simplified outline TO-220 and symbol


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    2sb434o-2202sd234 PDF

    2SD2345

    Contextual Info: Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 ● 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.


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    2sd234555nductor PDF

    2SD2343

    Abstract: 2SB1236 2SC4132 2SD1857 T100
    Contextual Info: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343


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    2sc41322sd18572sd234380mhz+22sb1236t100 PDF

    2SD2345J

    Abstract: SC-89 VEBO-15V
    Contextual Info: Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 15 V Collector current


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    2sd2345jsc-89vebo-15v PDF

    2SD234

    Abstract: 2SD235 Toshiba transistor 2sd234 2SD235 2SD234Y toshiba 2sd234y 2SD235Y 2SD235O fbise 2SB435
    Contextual Info: '> U 3 > N P N i£ |fc tt£ » 2SD234, 2SD235 SILICON NPN DIFFUSED JUNCTION TRANSISTOR O Audio Power Amplifier Applications • \ : V ce sat = 0. 2V(Ty p.) (Ic = lA ) 2SD235 • V9 : Pc = 25W(Tc = 25°C) • 2SB434, 2SB435 ¿ 3 y 7 ! ) A y ft i; 'O4 ~t\ • Complementary to 2SB434 and 2SB435.


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    2sd2342sd2352sb4342sb435+72sd235 toshibatransistor 2sd2342sd234ytoshiba 2sd234y2sd235y2sd235ofbise PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/ec2sd2345g PDF

    2SD2341

    Contextual Info: Power Transistors 2SD2341 Silicon NPN triple diffusion planar type Unit: mm For power amplification • Low collector to emitter saturation voltage VCE sat • High collector to emitter voltage VCEO • Allowing automatic insertion possible with radial taping


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    2sd2341 PDF

    2SD2345J

    Abstract: SC-89
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40


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    2002/95/ec2sd2345jsc-89 PDF

    2SB1531

    Abstract: 2SD2340 2sb15
    Contextual Info: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm M Di ain sc te on na tin nc ue e/ d 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output


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    2sb15312sd23402sb15 PDF

    2SD2345G

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/ec2sd2345g PDF

    2SD2345

    Contextual Info: Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 ● 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.


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    2sd234555tter PDF

    2sb1531

    Abstract: 2SD2340 130VB
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -5A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340 APPLICATIONS


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    2sd2340-130v2sb1531130vb PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    125mw2sc46272sc50212sa1790+162sc46262sc46552sc48092sc52952sc48082sa1806d2375d1259ad1267ad1265atransistor 2sa19492sd2328atransistors selection guided1261ac37952sb1526 PDF

    2SB1531

    Abstract: 2SD2340 1305s
    Contextual Info: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000


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    2sb15312sd23401305s PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40


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    2002/95/ec2sd2345j PDF

    2SB1186

    Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
    Contextual Info: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276


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    2sb12362sb11862sc41322sd1857+52sd23432sd176394l-268-a5696-175-c562sb1186 equivalent PDF

    2SD2349

    Contextual Info: SavantIC Semiconductor Product Specification 2SD2349 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for color TV PINNING


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    2sd234975khz PDF

    2SD234

    Abstract: 2SD234 equivalent 2SB434
    Contextual Info: SavantIC Semiconductor Product Specification 2SD234 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB434 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2sd234o-2202sb4342sd234 equivalent PDF

    2SD234

    Abstract: 2SB434
    Contextual Info: SavantIC Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2


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    2sb434o-2202sd23425tor-emitter PDF

    2SD2340

    Abstract: TO-3PN
    Contextual Info: SavantIC Semiconductor Product Specification 2SD2340 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2sd2340to-3pn PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/ec2sd2345g PDF

    Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)


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    2sd2345sc-75 PDF

    2SD2345

    Abstract: SC-75
    Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Peak collector current


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    2sd2345sc-75 PDF

    2SD2341

    Contextual Info: Power Transistors 2SD2341 Silicon NPN triple diffusion planar type Unit: mm For power amplification • Low collector to emitter saturation voltage VCE sat • High collector to emitter voltage VCEO • Allowing automatic insertion possible with radial taping


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    2sd2341 PDF