2SC4132 Search Results

100V 2A MPT3

Abstract: 2SB1236 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 2A 2SC4132 / 2SD1857 zDimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)

2SD2343

Abstract: 2SB1236 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343

to390

Abstract: 2SC4132 marking 82
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage

2SB1236

Abstract: 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation

2SB1186

Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
Contextual Info: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276

Contextual Info: 2SC4132 K 7 > V 3. £ /Transistors 2SC4 4 3 2 1 ^ y I/ - n p n 5/ y □ K 7 > > 7 y Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • • W fH '& H /D in ien slon s UnH : mm 1) Î B Œ Î Î 5 . BVc e o = 120V 2) fT I .€±0. t i?M < , Cob * ' m ' o

Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05

2SB1236

Abstract: 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 PC 2 Collector current 2SC4132 Collector power dissipation Junction temperature

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

D1763

Abstract: MARKING HRA SC4132 2SD1763 transistor D1857 B1186
Contextual Info: 2SB1236 / 2SB1186 2SC4132 / 2SD185712SD2343 / 2SD1763 Transistors Power Transistor — 120V, — 1.5A 2S B 1236 / 2S B 1186 •F e atu res 1 ) High breakdown voltage. iB V cso — — 120V) 2 ) Low collector output capacitance. (Typ. SO pFatV cB5 — 10V)

Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V)

RB815

Abstract: Model 450 Q2SC4132 2SC4132 rc28932e3
Contextual Info: SPICE PARAMETER 2SC4132 by ROHM TR Div. * 2SC4132 NPN BJT model * Date: 2006/11/20 .MODEL 2SC4132 NPN + IS=450.00E-15 + BF=90.847 + VAF=7.7000 + IKF=1.9224 + ISE=450.00E-15 + NE=1.4462 + BR=84.284 + VAR=100 + IKR=.28392 + ISC=2.3425E-9 + NC=1.8142 + NK=.67816

2SD1763 transistor

Abstract: 2SD1763 2SD2343 2SB1166 2SB1186 2SB1236 2SC4132 2SD1857 transistor 120v 40X40X0
Contextual Info: 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors I 120V, —1.5A Power Transistor 2SB1236 / 2SB1186 • A b s o lu t e m axim um ratings (T a = 2 5 'C ) •F e a tu re s 1) H ig h b re a k d o w n v o lta g e . (B V ceo = — 1 2 0 V )

2SC4132

Abstract: T100 sc-62 package oc sc62
Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SC4132; CB-A-, where ★ is hFE code high breakdown voltage BVqeo = 120 V high transition frequency (fT) low output capacitance (Cob)

2SD1857

Abstract: ROHM marking hFE CODE ROHM marking hFE 2SB1236 2SC4132 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation

2SC4132

Abstract: T100 T101
Contextual Info: h7 >V o c ^ 2SC4132 £ /Transistors 4 1 3 2 >u=3> Epitaxial Planar NPN Silicon Transistor Ji>j£^^ jiS lli# !/L o w Freq. Power Amp. • • ^t- \t"ji@/Dimensions U nit: mm 1) ® S 6 } li7 ife - 5 o BVceO=120V 2) fT ifm t < , Cob Af,® '''o 3) P c = 2 W T * £

2SC4132

Contextual Info: Power Transistor 120V, 2A 2SC4132 zDimensions (Unit : mm) 2SC4132 4.5 1.6 1.5 2.5 4.0 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.

2SD1857

Abstract: Transistor 2SD1857 2SB1236 2SC4132 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB
Contextual Info: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = 120V) 2) Low collector output capacitance. 2SC4132 (Typ. 20pF at V cb = 10V)

2SD977

Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75