2SD977
Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K
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2sd9712sd9722sd9732sd973a+152sd9742sd5602sd11622sd768002sd11902sd8632sd9772sd600k2sc22332sc23732sd8492sd19532sd763rohm 1004nec 2sd560
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STI-430
Abstract: STI430 TO247 package
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 KSP1055 KSP1075 KSP1095 SDT4945 UPT524 UPT525 MJ411 2SDl162M 2SD1162L'+'+" 25 30 - 35 40 45 -50 2SDl162K MJ3030 SPC431M SPC431 SDT1013 2N6235 BUT21A BUT21A A) t) SM14mm!'\ MJE53T MJE53T PEC7306A BUS21A (A)
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svt300-5mj3430spc4302n5240+5bdy43sdt40304sti-430sti430to247 package
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PA100
Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
Contextual Info: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9
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1cb012sd11352sd11362sd1137+102sd11382sd11402sd11452sd11472sd11482sd1176apa1002sd11762sd11592sb863
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318M
Contextual Info: SEC TENTATIVE SPECIFICATION SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1162 V443 HIGH VOLTAGE HIGH CURRENT SW ITCHING NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r transistor ignitor and m otor driver applications.
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2sd1162318m |
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2SD1188
Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150
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2sd11012sb8312sd11022sd1103+162sd11042sd11052sd11062sd11072sd11082sd11092sd11882sd11442sd11702sd11842sd11162sd11562sd11822sd11232sd11312sd1146
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1032B
Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD
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2sd10112sd10122sd10172sd1018+142sd10202sd10212sd10222sc36222sc30692sc34951032b2sd8452sd8132sd1010nec 10211012 toshiba10532sb1012
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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2SB600 NEC
Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .
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2sd8792sc32662sd9652sd1624+152sc28732sd11192sd19632sd16922sd12332sc43392sb600 nec2sd9662sd20612sb6001951b2sc36772sc34212sd14832sd1944
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2SC2801
Abstract: 2SD947 2SD549 2SD685 2SD728 2SD1878 2SD869 TOSHIBA 2SC1645 2sd1111 2SD727
Contextual Info: - 226 - m « Type No. * * *t € Manuf. m h SANYO 2SD 891 / fé T 2SD1111 2SD 892 fé T 2SD1U1 2SD 893 fé 2SD1153 T M. TOSHIBA B S NEC 31 HITACHI œ f I FUJITSU fé T MATSUSHITA 2SD892 H ft 2SD549 h ft 2SD716 2SD727 2SD 896 ^ H ft 2SD718 2SD728 2SD 897 S
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2sd8912sd8922sd11112sd1153+112sc16452sd9852sd5492sd7162sc28012sd9472sd6852sd7282sd18782sd869 toshiba2sd727
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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NEC 824A
Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330
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2sd7922sd7932sd7942sd795+162sd795a2sd7962sd7982sd7992sd8002sd801nec 824anec d 8092sd811 toshibanec d 809 knec k 81325c33252sc22332sb8372sc17412sd683a
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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SD 1083
Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «
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2sd10552sd12462sd6132sd525+152sc25622sd8432sd11372sd11342sd7432sd568sd 1083sd10872sd10842sd10332sd12382sd12452sd9872sd772b2sd1706
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2SC901A
Abstract: BUS21 BUW41
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r (CE)sat 'CBO Max hFE «T ON) Min (Hz) Max (A) Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 -10 . . -15 . . . 20
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2n5239sk3268upt5232n3584+5sdt49032sc901a2sc558bus21buw41
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1132
Abstract: 2SD1307 2SM77 1130b 2sc2484 2SD1175 2sd1176 2SD1111 2SD602 2SD987
Contextual Info: - m tt % £ = m SANYO S M TOSHIBA b NEC a B ÍI HITACHI "M dr FUJITSU iï fâ T MATSUSHITA 2SD 1092 — - S 2! 2SD 1096 B it 2SD 1097 B it 2SD1171 2SD 1098 B it 2SD1171 2SD 1099 B ir 2SD1175 2SD 1100 a ii 2SD 1101 B it 2SD 1102 B it 2SD1173 2SD 1103 B it 2SD1175
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2sd16412sc30762sd9922sd874+142sd17332sd11712sd11752sd13842sd104811322sd13072sm771130b2sc24842sd11762sd11112sd6022sd987
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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2SD1162
Abstract: Darlington NPN Silicon Diode HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON darlington power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 400 Min. @IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial
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vcc150v2sd1162darlington npn silicon diodehigh voltage switching npn power darlington+1darlington power transistor
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