2SD1140 Search Results

Contextual Info: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)

D1140

Abstract: transistor D1140 2SD1140
Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1140

Contextual Info: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER -2SD1140 INDUSTRIAL APPLICATIONS M I C R O M O TO R DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M A X . POWER AM PL I F I E R APPLICATIONS. FEATURES : . High DC Current Gain : hFE=l!,000( M i n •)

transistor D1140

Abstract: D1140 2SD1140
Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

D1140

Abstract: 2SD1140
Contextual Info: 2SD1140 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1140 通 信 工 業 用 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 4000 (最小) (VCE = 2 V, IC = 150 mA)

PA100

Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
Contextual Info: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9

2SD1140

Contextual Info: 2SD1140 TO SHIBA TOSHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M AX. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE —4000 (Min.)

D1140

Abstract: 2SD1140
Contextual Info: 2SD1140 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1140 通 信 工 業 用 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 4000 (最小) (VCE = 2 V, IC = 150 mA)

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

transistor D1140

Abstract: D1140 2SD1140
Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

D1140

Abstract: D1140 transistor diagram 2SD1140 transistor D1140 d1140 equivalent component
Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1140

Contextual Info: 2SD1140 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 140 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 5.1 MAX. POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : hpE —4000 (Min.)

2SD1140

Contextual Info: 2SD1140 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 140 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 MAX. POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : hpE —4000 (Min.)

Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

transistor D1140

Contextual Info: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: 2SD1140 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) ? < ; n w ar mmr m i u m n m w MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current