2SB863 Search Results

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

2SD1148

Abstract: 2SB863 equivalent 2sb863 hfe1
Contextual Info: Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB863

Abstract: 2sd1148
Contextual Info: SavantIC Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB863

Abstract: 2sb863 transistor 2SD1148 SC-65
Contextual Info: 2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage

2sd1148

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm .1S9MAX. . 0 3 ,2 ±0.2 FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25uC &45±Q2 RATING

2SD1148

Abstract: 2SB863 audio amplifier 70w
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9MAX. . 0 3.2±qg FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC RATING

2sb863 transistor

Abstract: 2sb863 2sd1148
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB863 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 APPLICATIONS ·Power amplifier applications

Contextual Info: T oshiba oiscrete St. /o p to T 2SD1148 9097250 TOSHIBA DISCRETE/OPTO DE I ^ O T Y E S D i>6C 07873 0007073 DT-3B-J3 SILICO N NPN T R IP L E D IFFU S ED TYP E POWER AMPLIFIER APPLICATIONS. Unit in mm 1&9MAX. 0 3 .Z ± O iS FEATURES: r> . Complementary to 2SB863.

2SB863

Abstract: 2SB863 equivalent 2sd1148
Contextual Info: Inchange Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage

tip340

Abstract: 2sb705 nec BUW23 2sA747A sanken 2SA747A BUW32A B0246C 2SB705 BOX20 2SA747 sanken
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 2SA747 2SA747 2SA878 2SA1067 2SA1040 TIP340 2SA1072 2SA1077 2~1:J10;j2K 55 60 2SB955K 2SA1007 2SA1232R 2SA1232Q 2SA1232P 2N6231 BOX20 BOX20 2SA747A ~~p~~1U6 65 70 2SB705 2SB863 2SA1265

2sd1148

Abstract: 2sb863
Contextual Info: SavantIC Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB863

Contextual Info: 2SB863 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm POW ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1148 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. a I M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

2sb863

Abstract: 2sd1148
Contextual Info: JMnic Product Specification 2SB863 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage PINNING

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

2SB863

Abstract: 2SD1148
Contextual Info: TOSHIBA ~5b { D I S C R E T E / O P T 0> ]>|F| TCHVESO □□□73ía3 S "| ~ „y 9097250 TOSHIBA 3 3 CDIS C R E T E / O P T O ~ S IL IC O N PNP T R IP L E D IF F U SE D TYPE_ Unit in mm o POWER AMPLIFIER APPLICATIONS. 0 a.2 ±az ia9MAX. FEATURES:

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current