2SB1010 Search Results

2SB1010

Abstract: 2Sb1010 transistor
Contextual Info: h -7 > y X £ / T ransistors 2 S B 1 1 2SB1010 + '> U = i> h 7 > y ^ ^ /M ed iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • • W fi'+ jiH /D im e n s io n s U n it: mm 1) lCp : - 3 A , h "7 P c = 0 .7 5 W (7 )± h h * o 2) Low VcE ( sat \ C (fe "S

2Sb1010 transistor

Abstract: 2sb1010
Contextual Info: h -7 > O V C 2SB1010 /T r a n s is to r s $ R i n i 7 °U -^ P N P y ' j 3 > h 7 > v 7 $ Epitaxial Planar PNP Silicon Transistor • t ' ^ ^ ^ ’Ü ffl/M edium Power Amp. O W J fi'+ Ü E I/D im e n s io n s U nit : mm 1) I C P = - 3 V , PC Max = 0 .7 5 W

2SD1929

Abstract: 2SD2172 2sd1930 2SB1425 2SA1780 2SB1041 2SD2159 2SA1482 2SB1256 2SD2007
Contextual Info: ¡TÏÏTÏÏÏ1 T r an s i s t o r s • TO-92L, MRT Types Type Function It: u 1. A -32 1 -2 0.75 1.2 82 - 390 Ver ( V ) -3 -80 0.7 . 0.75 1.2 82 - 390 -3 -100 -32 2 -3 -80 -1 2SB1329 2SA935 2SB1330 2SB1010 2SB1331 2SB1041 2SB1332 -50 -1 -1 5 2SB1043 2SB1212

Contextual Info: MOE D ROHM CO LTD B TöEfi'm GQ0SS21 7 H R H M h 7 > ì? X $ / T ransistors 2SB1010 — 2S I " X 7 ^ 2 7 -A T t 8^ d e - v ^ ; U 7 ° U - ^ B P N P V ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistor • $#ü: • •'f’SÉlSI/Dimensions Unit : mm

transistor r1010

Abstract: R1010 r1010 TRANSISTOR 2SB1010 2Sb1010 transistor R10-10 T103 2SD1384 a/transistor r1010
Contextual Info: h ~7 > y ^ $ / T ransistors 2 S B 2SB1010 x V * * * s 7 K 7 \s— t m P H P y ^ > h 7 > y ' x ^ 1 0 1 0 /Medium Power Amp. Epitaxial Planar PNP Silicon Transistor • ^ JFÌrfjÉ IS /D in ie n sio n s Unit : mm 1) Icp : —3A, P c= 0 .7 5 W (7 )± tb * o

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

Contextual Info: / T ransistors 2S 1384 D 2SD1384 77 it : ^ J r '> ^ V - ^ N P N y ' j 3 > h 7 > y z $ 4,i l 2 :t# llllffl/Medium Power Amp. Epitaxial Planar NPN Silicon Transistor \r;£ 0 /D im e n s io n s U n it: mm) Vf^V'A'vli-r • 1) ICm = 2.5A Pc =0.75WCD±t±J*)o

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2SD1384

Abstract: ST-103 2Sb1010 transistor
Contextual Info: / T ransistors 2SD1384 2SD1384 7^1/7 l ^ - ^ N P N y'j=i> b y > y Z 2 I If Epitaxial Planar NPN Silicon Transistor 4 ,f t ^ * £ llli£3/Mecliiim Power Amp. • fl-JfiTfjiESI/Dimensions Unit : mm 1) Ic m = 2.5A Pc = 0 7 5 W ( D * i U * o 2) VcE(sat) VCE(sat)=0.3V(Typ.)

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

2SB1328

Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Contextual Info: h -7 > ' s 7> $ / T ransistors 2SD1384 ROHM CO L T D MOE 2SD1384 D • 7 fi S Ö Q D GS ô b T 3 ■ R HM x t ^ y y W l s - U f t NPN y'J= i> b T s y Z t 7 = 2 7 - / r Power Amp. Epitaxial Planar NPN Silicon Transistor • 1 Ic m = 2.5A Dim ensions Unit : mm)

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2SB1013

Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041
Contextual Info: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367

2sa850

Abstract: 2sa1047 2SA872 2SA992 2SB564A 2sa9630 2SA1038 2SB861 2SA1015 2SB1212
Contextual Info: - 18 - m « tt Type No. « Manuf. - 2SA 930 i¥ SANYO 2SA929 *± 3 2 S A 931 = - 2SA 935 2SA 936 _ □ — i*. 2SA 937 - o — A 2SA1783 2SA 938 V - - 2SA1339 2SA 939 *± JS 2SA1210 2SA 934 , 2SA 940 > 2 S A 941 •> 2SA 942 _ „ 2 SA 950 2 S A 951 2SA 952