2N109 Search Results

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

6ae diode

Abstract: 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807 MSP100
Contextual Info: POWER SILICON NPN Item Number Part Number I C S 10 20 2N10S0 2N1613A 2NS914 PT8890 PT8871 PT8871A MRF402 MRF402 ~~~~~~ 2S 30 2NS687 2NS688 2N2234 2N2234 2N2234 2NS710 2N6206 2N6206 ~~~~g~ 35 40 2N1092 MRF8003 2SC971 2N6202 2N6202 2N6202 2NS773 TIP61 ~g~~~~:~

Contextual Info: 2N1098 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.

Contextual Info: 2N1097 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18ã V(BR)CBO (V)18 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)16u @V(CBO) (V) (Test Condition)16 h(FE) Min. Current gain.34 h(FE) Max. Current gain.90

Contextual Info: 2N1096 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2N109

Contextual Info: 2N109 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A)150m Absolute Max. Power Diss. (W)165m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0uØ @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.65 h(FE) Max. Current gain.115

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Contextual Info: 2N1095 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: 2N1091 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)25 I(C) Max. (A)400m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.40 h(FE) Max. Current gain.70Â

Contextual Info: 2N1090 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)400m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.30 h(FE) Max. Current gain.50Â

Contextual Info: 2N1094 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: 2N1093 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.150

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N1595

Abstract: 2N1599 TI145AO TIC44 SAA 3007 P 2n1696 tic 47 TIC106 2N169B TIC64
Contextual Info: TYPES 2N1595 THRU 2N1S99 P-N-P-N DIFFUSED SILICON REVERSE-BLOCKING TRIODE THYRISTORS 1 A M P DC • 60 to 400 V O L T S * mechanical data THE ANODE IS IN ELECTRICAL CONTACT WITH THE CASE. THE GATE TERMINAL IS CONNECTED TO A P REGION. ALL JEDEC TO-5 DIMENSIONS

2N1103

Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1146

Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
Contextual Info: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

nkt270

Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
Contextual Info: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books