TO36 Search Results

pnp germanium to36

Abstract: NTE330 Germanium power
Contextual Info: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.

B12 GDM

Abstract: s3v03 pj950 RM3203 s3v 03 c5121 00 toshiba hdd schematic diagram 12b gdm TOSHIBA CRT TV SCHEMATIC DIAGRAM PZ47913-274B-01
Contextual Info: 5 TO3655— 2E T O S H I B A C O N F I D E N T I A L SCHEMATIC PRODUCT UNIT NAME DIAGRAMS MlBSlQ CR VP EMDSY 1 NAME UNIT NG. PWA NAME PWA NO. PWB NAME PWB NO. PAGE SH. REV PAGE FUNCTION 1 OO 1 COVER SHEET O1 2 002 COVER & Rev. 3 003 BLOCK DIAGRAM 4 004 5 100

germanium transistor pnp

Abstract: nte213
Contextual Info: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:

Triangle Microwave phase shifter

Abstract: AQ-81 phase shifter AQ24 Triangle Microwave AQ-42 triangle KDI
Contextual Info: VOLTAGE CONTROLLED, 360-DEG. SERIES AQ PIN DIODE PHASE SHIFTER GENERAL INFORMATION: KDI/Triarigle’s Series AQ, 0-to360-deg. analog PIN-diode phase shifters vary the phase of a microwave signal by varying a DC voltage. The Series AQ is very fast, and provides low amplitude ripple and excellent

NTE105

Abstract: TO36 package pnp germanium to36 Germanium power
Contextual Info: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

BLW 82

Abstract: p106 P127 transistor p86 DD15 TO13
Contextual Info: VDDE P102/TO10/CTX0 P101/TO9/CRX0 P100/TO8 P117/TO7/TO36/DD4 P116/TO6/TO35/DD5 P115/TO5/TO34/DD6 P114/TO4/TO33/DD7 P113/TO3/TO32/DD8 P112/TO2/TO31/DD9 P111/TO1/TO30/DD10 P110/TO0/TO29/DD11 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20/DD12 P96/TO19/DD13 P95/TO18/RXD5/DD14

BLW 82

Abstract: p106 P127 DD15
Contextual Info: VDDE P102/TO10/CTX0 P101/TO9/CRX0 P100/TO8 P117/TO7/TO36/DD4 P116/TO6/TO35/DD5 P115/TO5/TO34/DD6 P114/TO4/TO33/DD7 P113/TO3/TO32/DD8 P112/TO2/TO31/DD9 P111/TO1/TO30/DD10 P110/TO0/TO29/DD11 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20/DD12 P96/TO19/DD13 P95/TO18/RXD5/DD14

SPW-616-D

Contextual Info: jp Si P a rt N u m b e r Single 1 15V 6 pin ,h3 ' FW 350 S i . i PIN DIMENSION .020 X .041 .508 X 1.041 SPW -350 to SPW -620 Series Dual Primary (-D) pm 3 Gec 1.1 to36VA 3 . •» y—.7 Pins 2 & 3 Omitted • Indicates like polarity ( 2.4 ) = mm * Refer to Technical Bulletin #214

Contextual Info: PCI LM7900 Series 3-Terminal Negative Output Voltage Regulators Semiconductor J FEATURES [ PIN ARRANGEMENT • No External Components Required • Internal Thermal Overload Protection • Internal Short-Circuit Current Limiting • Output Transistor Safe-Area Compensation

P210-P217

Abstract: renesas M32R m32174 M32R M32R RTD mitsubishi p93 TO41 package M32170 P210/TO37 M32170F3VWG
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

QFP240-P-3232-0

Abstract: TO41 package M32180F8VFP bl p76 TIN18-P137 TO9 package IEEE754 M32180F8TFP M32R DSA003646
Contextual Info: Mitsubishi Microcomputers 2002-07-12 Rev.1.0 32180 Group Under Development SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER Description The 32180 Group is a 32-bit, single-chip RISC microcomputer with built-in flash memory, which was developed for use in general industrial and household equipment. To accomplish high-precision arithmetic operations, it incorporates a fully IEEE754 compliant, single-precision FPU.

2N1358

Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
Contextual Info: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments

dn5d

Abstract: DN3135K1
Contextual Info: DN3135 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description The Supertex DN3135 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

11b3 DIODE

Abstract: diagrams hitachi ecu RTD 1185 DATA SHEET M32R RTD rtd ic 1117 3.3 analog devices 118a ECU 206 FD31 hitachi ecu datasheet
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

Delco

Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

2N1100

Abstract: 2N2082 2n441 2N1523 2N443 2N4048 2N174 2N442 2N2076 2N277
Contextual Info: germanium power transistors 153 PNP ALLOY TRANSISTORS Up to 65 Amp RATED BREAKDOWN VOLTAGES TfPE NU~'BERS 2N 173 2N 174 2N 277 2N 278 2N441 2N442 2N443 2N 1099 2N 1100 2N 1358 2N 1412 2N 1970 2N 1980 2N 1981 2N 1982 2N 2075 2N 2076 2N 2077 2N 2078 2N 2079

2N4048

Abstract: pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053
Contextual Info: 59 GERMANIUM POWER TRANSISTORS C U R R E f JT G A IN SA T U R A T IO M V O LT A G ES @> @ TYPE N U M BER C A SE T YPE VCBO V V CEO V C ER V V EBO V 30 AM P GE 3MAN UM P VIP V C ES V M IN . hl:E | M AX. V CE V I 'c A V C E s V BE(s> V I V ’c A 'b I A Observe (—) Negative Polarity

Contextual Info: {Z T SGS-THOMSON JÆ, IM » I[L I ^ [M i* STLC7550 LOW POWER LOW VOLTAGE ANALOG FRONT END PRELIMINARY DATA • GENERAL PURPOSE SIGNAL PROCESSING ANALOG FRONT END (AFE ■ TARGETED FOR V.34bis MODEM AND 56Kbps MODEM APPLICATIONS ■ 16-BIT OVERSAMPLING L A A/D AND D/A

Contextual Info: { Z T SGS-THOMSON JÆ, IM » I[L I ^ [M i* STLC7550 LOW POWER LOW VOLTAGE ANALOG FRONT END PRELIM IN ARY DATA • GENERAL PURPOSE SIGNAL PROCESSING ANALOG FRONT END (AFE ■ TARGETED FOR V.34bis MODEM AND 56Kbps MODEM APPLICATIONS ■ 16-BIT OVERSAMPLING L A A/D AND D/A

2n1478

Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150