2N524 Search Results

2N404

Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
Contextual Info: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240

D38S1-4

Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

transistor ah

Abstract: 2N5241 BDX 625 bdx 540 1N914 2N3440 TIP 110 transistor TIP 75 transistor
Contextual Info: TYPE 2N5241 N-P-N SILICON POWER TRAN SISTO R H IG H V O L T A G E , H IG H FO RW A R D £ N D REVERSE ENERGY D ESIG N E D FOR IN D U S T R IA L A N D M IL IT A R Y A P PLIC A TIO N S 125 W at 62.5°C Case Temperature 4 00 V Collector-Emitter Off-State Voltage

TA2765

Abstract: 2N5240 TA2765A 2n5239 Pt-100W
Contextual Info: File Number HARRI S 321 SEHICON] 2N5239, 2N5240 SECTOR SbE ]> • M3Q5S71 High-Voltage, Silicon N-P-N T ransistors D04Q455 731 B H A S ^^3 ~/3 For High-Speed Switching and Linear-Amplifier Applications in Industrial and Commerical Service Features: ■ H igh voltage ratings: Vcer[si/s]

Contextual Info: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N5240

Abstract: Catalog Bipolar Transistor
Contextual Info: 2N5240 High-voltage Silicon N-P-N Transistor. 9.95 Transistors Bipolar . 1 of 2 Home Part Number: 2N5240 Online Store 2N5240 Diodes High- vo lt age Silic o n N- P- N Trans ist o r. Transistors Enter code INTER3 at

Contextual Info: NPN Power Silicon Transistor 2N5240 Features • High Voltage: Vceo sus = 300 V (min) • Wide Area of Safe Operation • Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers.

2N5249

Abstract: 2N5249A
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N5249 2N5249A TO-92 Plastic Package E CB Designed for High Gain Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N5245

Abstract: 2N5247 2N5246 2n5245 motorola
Contextual Info: MO TO RO LA SC 1EE D § fc,3b?ES4 GGäbb44 fl | X S TR S/ R F 2N5245 thru 2N5247 , CASE 29-04, STYLE 23 TO-92 TO-226AA M A X IM U M R A T IN G S R ating S ym bol Value Drain-Gate Voltage VDG 30 Vdc G ate-Source Voltage VGS -3 0 Vdc U n it Gate C urrent Ig

300V transistor npn 2a

Abstract: 2N5240 voltage regulators 300v dc 300V series regulators 200V transistor npn 2a 300V regulator 2N5240 inchange
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 DESCRIPTION •High Voltage: VCEO SUS = 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and

Contextual Info: 2N5245 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

RCA1E03

Abstract: RCA1A10 2N5415
Contextual Info: um wm m am Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts conf d V C E X (sus) V V V ^ g ls a t) —-V 'CEX-mA ‘c V CE Temp.—°C A A 25 •c •b V A A m V CEO*sus) 9 < o hFE 2N5240 FAMILY (n-p-n) Multiple Exitaxial (Cont'd) f j to 5MHz min; P j to 100 W max

Low-Power Germanium PNP

Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237

2N5249

Contextual Info: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: NPN Power Silicon Transistor 2N5240 Features • High Voltage: Vceo sus = 300 V (min) • Wide Area of Safe Operation • Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers.

2n524

Contextual Info: 2N524 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.25 h(FE) Max. Current gain.42

quan-tech

Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

2n5253

Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321

2N5245 transistor

Abstract: 2N5245 2N5247 2N5246
Contextual Info: Data Sheet ^^ H F a h v m i I liC V liiQ I 2N5245 2N5246 2N5247 TM Sem iconductor Corp. N-CHANNEL JU N C TIO N 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 F 1 ELD EFFECT TRANS 1ST0R JEDEC T O -9 2 CASE Manufacturers of W orld Class Discrete Semiconductors

2N5245

Abstract: 2n5245 equivalent N-Channel RF Amplifier
Contextual Info: 2N5245 2N5245 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain

2N5246

Contextual Info: 2N5246 2N5246 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain

2N5240

Abstract: 2n5239 2N5241
Contextual Info: HIGH VOLTAGE TRAN SISTO RS TO-3 TYPE NO PT @ Ic VcEO Ic @ SUS 25°C MAX MA V Watts A 2N5239 2N5240 2N 5241 100 100 125 5.0 5.0 5.0 225 300 325 100 100 100 @ Veto Icto @ @ VCEX m Ic Ic s 'C MA V MA 300 4.0 375 2.0 400 2.5 300 375 400 4.0 2.0 5.0 V brE MIN MAX

Contextual Info: 2N524A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.