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    2N5302 Search Results

    2N5302 Datasheets (54)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5302
    Microsemi NPN Transistor Original PDF 58.31KB 2
    2N5302
    Motorola 30A NPN SILICON POWER TRANSISTOR 60V 200W Original PDF 256.72KB 6
    2N5302
    On Semiconductor High-Power NPN Silicon Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF 117.09KB 8
    2N5302
    On Semiconductor High-Power NPN Silicon Transistor Original PDF 90.87KB 5
    2N5302
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF 10.97KB 1
    2N5302
    Wing Shing Computer Components NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF 47.35KB 1
    2N5302
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 404.58KB 5
    2N5302
    API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF 209.36KB 2
    2N5302
    Diode Transistor Transistor Short Form Data Scan PDF 75.59KB 1
    2N5302
    Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF 36.55KB 1
    2N5302
    Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF 43.23KB 1
    2N5302
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N5302
    General Electric High current, high power, high speed N-P-N power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF 189.6KB 4
    2N5302
    General Transistor Power Transistor Selection Guide Scan PDF 401.54KB 5
    2N5302
    Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF 182.71KB 4
    2N5302
    Mospec NPN Silicon High-Power Transistor Scan PDF 182.7KB 4
    2N5302
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 298.83KB 7
    2N5302
    Motorola The European Selection Data Book 1976 Scan PDF 55.25KB 1
    2N5302
    Motorola European Master Selection Guide 1986 Scan PDF 57.68KB 1
    2N5302
    Motorola Power Transistor Selection Guide Scan PDF 325.11KB 6
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    2N5302 Price and Stock

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    Microchip Technology Inc 2N5302

    Transistor - NPN Silicon - Power - 60V - 30A - 2 MHz
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    Onlinecomponents.com 2N5302
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    Microchip Technology Inc JANTXV2N5302

    60V 30A 5W NPN Power BJT THT
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    Microchip Technology Inc JANTX2N5302

    60V 30A 5W NPN Power BJT THT
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    Microchip Technology Inc JAN2N5302

    60V 30A 5W NPN Power BJT THT
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    VPT Components JANTX2N5302

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    TTI JANTX2N5302 EDWF 57 1
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    2N5302 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan
    2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1 PDF

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


    Original
    2n5301/d2n53012n5302108 motorola transistor+42n43982n43992n53032n5745 PDF

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan
    2n53012n53022n53032n4398+92n4399tip 110 transistortip 22 transistortip 41 transistortip 122 transistor application circuitpit 3055tip 122 transistortransistor tip 127transistor tip 3055 PDF

    2N5302

    Abstract: 2N5302 JANTXV
    Contextual Info: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2n5302o204aa31-jul-022n5302 jantxv PDF

    2N5302

    Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
    Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original
    mil-prf-19500/4562n53022n53031000c+4o-204aa2n5302 transistortransistor 2n53022n5302 jantxv PDF

    Contextual Info: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2n5302o204aa18-jun-02 PDF

    Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan
    0g173fii2n53012n53022n5303+4tq-204aarca-2n53012n53q22ns303 PDF

    Contextual Info: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ


    Original
    2n53022n5302/d PDF

    Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original
    mil-prf-19500/2n53022n53031000c+1o-204aa PDF

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Contextual Info: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original
    2n53012n53022n53032n4398+32n43992n5302 transistor2n5745 PDF

    2N5302

    Abstract: 2N5303 jantx 2n5302 adc ic 1000C
    Contextual Info: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage


    Original
    2n53022n5303mil-prf-19500/4561000c+3o-204-aajantx 2n5302adc ic PDF

    2N39024

    Abstract: jantx 2n5302
    Contextual Info: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716*' 80 10 2N39024* 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60


    OCR Scan
    2n37152n37162n390242n5302+72n53032n56852n56862n62492n62502n6251jantx 2n5302 PDF

    2N5301

    Abstract: 2N5302 2N5303 2n53
    Contextual Info: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching


    Original
    2n53012n53022n53032n4398/4399/5745+12n53 PDF

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Contextual Info: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


    OCR Scan
    2n53012n53022n53032n4398+32n43992n5745n5303 PDF

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan
    2n53012n53022n5303rca-2n5301+22nb3012ns303 PDF

    Contextual Info: 2N5302+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2n5302 PDF

    2N4398

    Abstract: 2n4399 4398m
    Contextual Info: TYPES 2N4398, 2N4399 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS CD H F O R P O W ER -A M P LIFIER AND HIGH -SPEED -SW ITCHING A P P LIC A T IO N S D ES IG N ED FO R C O M P LE M EN T A R Y USE WITH 2N5301, 2N5302 c < r "D r m m H to • 200 Watts at 25° C Case Temperature


    OCR Scan
    2n43982n43992n53012n5302+14398m PDF

    2N5301

    Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
    Contextual Info: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original
    2n53012n53022n53032n4398/4399/5745+353-02v2n5302 data sheet2n5302 inchange PDF

    2n5302 transistor

    Abstract: 2N5302 2N5302G MS5302
    Contextual Info: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original
    2n53022n5302/d2n5302 transistor2n5302g+1ms5302 PDF

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan
    ogog43e2n5152s2n51532n5153s+122n51542n5154s2n52392n52402n52412n52522n52532n55962n53212n53572n5498lta 301 PDF

    Contextual Info: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original
    2n5302 PDF

    fu 5303

    Abstract: 4410b
    Contextual Info: File Num ber 2N5301, 2N5302, 2N5303 1029 High-Current High-Power High-Speed N-P-N Power T ransistors TERMINAL DESIGNATIONS Feature«: • Specification tor h rE and VcE sat up to 30 A ■ Current gain-bandwidth pro d u ct h = 2 MHz min. at 1 A ■ Low saturation voltage with high beta


    OCR Scan
    2n53012n53022n5303o-204aa+2fu 53034410b PDF

    Contextual Info: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A


    OCR Scan
    2n53012n53022n530343d2271+1o-204aa PDF

    2N5303

    Abstract: 2n5302 2N530I 2N5302 EB 2N5301
    Contextual Info: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS .FO R U SE IN P O W E R A M P L IF IE R AND SW ITCH IN G C IR C U IT S A PPLIC A TIO N S. H i g h C o l l e c t o r - E m i t t e r S u s t a in in g V o l t a g e ' C E O S U S


    OCR Scan
    2n53012n53022n53032n4398+32n43992n530i2n5302 eb PDF