2N5302 Search Results
2N5302 Datasheets (54)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N5302 | Microsemi | NPN Transistor | Original | 58.31KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Motorola | 30A NPN SILICON POWER TRANSISTOR 60V 200W | Original | 256.72KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | On Semiconductor | High-Power NPN Silicon Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 | Original | 117.09KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | On Semiconductor | High-Power NPN Silicon Transistor | Original | 90.87KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Semelab | Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 | Original | 10.97KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Wing Shing Computer Components | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 | Original | 47.35KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Advanced Semiconductor | Silicon Transistor Selection Guide | Scan | 404.58KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | API Electronics | 25 AMPS / 30 AMPS NPN Transistors | Scan | 209.36KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Diode Transistor | Transistor Short Form Data | Scan | 75.59KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Fairchild Semiconductor | Misc. Data Book Scans 1975/76 | Scan | 36.55KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 | Scan | 43.23KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | General Diode | Transistor Selection Guide | Scan | 608.68KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | General Electric | High current, high power, high speed N-P-N power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 | Scan | 189.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | General Transistor | Power Transistor Selection Guide | Scan | 401.54KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Mospec | POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 | Scan | 182.71KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Mospec | NPN Silicon High-Power Transistor | Scan | 182.7KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Motorola | Motorola Semiconductor Data & Cross Reference Book | Scan | 298.83KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Motorola | The European Selection Data Book 1976 | Scan | 55.25KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Motorola | European Master Selection Guide 1986 | Scan | 57.68KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5302 | Motorola | Power Transistor Selection Guide | Scan | 325.11KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N5302 Price and Stock
Microchip Technology Inc 2N5302Transistor - NPN Silicon - Power - 60V - 30A - 2 MHz |
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Microchip Technology Inc JANTXV2N530260V 30A 5W NPN Power BJT THT |
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Microchip Technology Inc JANTX2N530260V 30A 5W NPN Power BJT THT |
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Microchip Technology Inc JAN2N530260V 30A 5W NPN Power BJT THT |
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2N5302 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
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OCR Scan |
2n37132n37142n37152n3716+16 | |
2N5301
Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
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Original |
2n5301/d2n53012n5302108 motorola transistor+4 | |
TIP 110 transistor
Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
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OCR Scan |
2n53012n53022n53032n4398+9 | |
2N5302
Abstract: 2N5302 JANTXV
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Original |
2n5302o204aa31-jul-022n5302 jantxv | |
2N5302
Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
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Original |
mil-prf-19500/4562n53022n53031000c+4 | |
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Contextual Info: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
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2n5302o204aa18-jun-02 | |
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Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power |
OCR Scan |
0g173fii2n53012n53022n5303+4 | |
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Contextual Info: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ |
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2n53022n5302/d | |
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Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage |
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mil-prf-19500/2n53022n53031000c+1 | |
2N5301
Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
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Original |
2n53012n53022n53032n4398+3 | |
2N5302
Abstract: 2N5303 jantx 2n5302 adc ic 1000C
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Original |
2n53022n5303mil-prf-19500/4561000c+3 | |
2N39024
Abstract: jantx 2n5302
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OCR Scan |
2n37152n37162n390242n5302+7 | |
2N5301
Abstract: 2N5302 2N5303 2n53
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Original |
2n53012n53022n53032n4398/4399/5745+1 | |
2N5302
Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
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OCR Scan |
2n53012n53022n53032n4398+3 | |
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2N5301
Abstract: 2N5302 2N5303 RCA-2N5301
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OCR Scan |
2n53012n53022n5303rca-2n5301+2 | |
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Contextual Info: 2N5302+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2n5302 | |
2N4398
Abstract: 2n4399 4398m
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OCR Scan |
2n43982n43992n53012n5302+1 | |
2N5301
Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
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Original |
2n53012n53022n53032n4398/4399/5745+3 | |
2n5302 transistor
Abstract: 2N5302 2N5302G MS5302
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Original |
2n53022n5302/d2n5302 transistor2n5302g+1 | |
2n5253
Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
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OCR Scan |
ogog43e2n5152s2n51532n5153s+12 | |
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Contextual Info: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc |
Original |
2n5302 | |
fu 5303
Abstract: 4410b
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OCR Scan |
2n53012n53022n5303o-204aa+2 | |
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Contextual Info: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A |
OCR Scan |
2n53012n53022n530343d2271+1 | |
2N5303
Abstract: 2n5302 2N530I 2N5302 EB 2N5301
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OCR Scan |
2n53012n53022n53032n4398+3 | |