2N5239 Search Results

TA2765

Abstract: 2N5240 TA2765A 2n5239 Pt-100W
Contextual Info: File Number HARRI S 321 SEHICON] 2N5239, 2N5240 SECTOR SbE ]> • M3Q5S71 High-Voltage, Silicon N-P-N T ransistors D04Q455 731 B H A S ^^3 ~/3 For High-Speed Switching and Linear-Amplifier Applications in Industrial and Commerical Service Features: ■ H igh voltage ratings: Vcer[si/s]

2SC558

Abstract: 2SC558 c UJ35 2SC901A mje51t
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, SOT4901 SOT4921 KSP1051 KSP1071 KSP1091 SOT4941 UPT522 MJ410 TIP525 TIP525 i:~~~~ 15 20 TIP526 TIP526 SOT1628 SOT1628 SOT1658 SOT1658 SOT1638 SOT1638 ~gi~~~g 25 30 SOT1011 2N5239 SOT4902 SOT4922 KSP1052

TA2765

Abstract: 2N5240
Contextual Info: File Number 321 2N5239, 2N5240 High-Voltage, Silicon N-P-N Transistors For H ig h-S p eed S w itching and Linear-A m plifier A pplications in Industrial and C om m erical Service Features: • H ig h volta ge ra tin g s : 1 / c e r [ s u s ] = 3 5 0 V, A be < 50 O 2N5240

2n5253

Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321

2N5240

Abstract: 2n5239 2N5241
Contextual Info: HIGH VOLTAGE TRAN SISTO RS TO-3 TYPE NO PT @ Ic VcEO Ic @ SUS 25°C MAX MA V Watts A 2N5239 2N5240 2N 5241 100 100 125 5.0 5.0 5.0 225 300 325 100 100 100 @ Veto Icto @ @ VCEX m Ic Ic s 'C MA V MA 300 4.0 375 2.0 400 2.5 300 375 400 4.0 2.0 5.0 V brE MIN MAX

2N5239

Contextual Info: SavantIC Semiconductor Product Specification 2N5239 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Switching regulator ·Inverters ·Power amplifiers ·Deflection circuits ·High-voltage bridge amplifiers

2N3507 JANTX

Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
Contextual Info: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C

TA2765

Abstract: RCA-2N5239 2N5239 2N5240 TA2765A 17165 RCA Solid State Power Transistor gi clare rca cmc rca+2n5240
Contextual Info: 01 DE J 3075001 Q0171b4 1 3 8 7 5 Ö 8 T ~ g T E SOLID STATE High-Voltage Power Transistors 0 IE 17164 D , _ _ 2N5239, 2N5240 File Number 321 High-Voltage, Silicon N-P-N Transistors For Hicih-Soeed Switching and Linear-Amplifier Applications in

Contextual Info: HIGH VOLTAGE TRANSISTORS TYPE NO. 2N5239 2N5240 2N5241 m PT @ • « V ceo k Wax lc Vtxo loo lc hit lc « . @ , . Viso Iebo Vet 125*C k Vet (SAT) 25« : M(AX SUS V V V MA MIN MAX A V< MA V A V MA MA wm s ; A 20 80 5 .4 5 5 100 5.0 225 100 300 4.0 300 4.0

2N5239

Abstract: 2N5241 2n5241 jantx 2N5240 to-53
Contextual Info: HIGH VOLTAGE TRANSISTORS PT TYPE NO. 2N5239 2N5240 2N5241 Ic • Va» k m « Vao loo Wax Ic « 2SC M AX SUS V MA V MA wm s ; A 100 5.0 225 100 300 4.0 100 5.0 300 100 375 2.0 125 5.0 325 100 400 2.5 @ hit . È (125*C k V MA MIN MAX 300 375 400 20 20

2n5415 complementary

Abstract: BFT19B 2N5239 2N5240 2N5838 2N5840 BD550B BUX16 BUX16A BUX16B
Contextual Info: TH O n S O N / D I S T R I B U T O R SflE D • “ia5t.a73 O O O S T E T ATT m TCSK - Bipolar Power Transistors High-Voltage Continued V cE(*at)-V *>FE v C E O (su s ) VCEV(SUS) V Type No. V 2N5240 FA M ILY (n-p-n) BUX16 BD550B 2N5239 2N5838 BUX16A 2N5839

2N5240

Abstract: 2N323 2N5241
Contextual Info: HIGH VOLTACI TRANSISTORS PT TYPE NO. 5.0 5.0 5.0 100 100 125 2N5239 2N5240 * 2N5241 225 300 325 9 <§ <a lc lc Vcio ?us 25*C M A X MA V Watts A VCEO 100 100 100 ICiO V cex lc hrE V ebo 125*0 V MA V 300 375 400 4.0 2.0 2.5 300 375 400 MA 4.0 2.0 5.0 M IN M AX

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

Contextual Info: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C

2N5478

Contextual Info: SEMELAB LTD • ai33ia? . .-' _ ISMLB 0000DE1 T~ 3 3 -¿ / ^ Reliability Polarity Option Package O ■type No. < o m '“«¿Sslssiia, *c cont hFE@ VCE/'C «T Pd | r 2N5190 2N5191 2N5192 2N5193 2N5194 NPN NPN NPN PNP PNP 40 60 80 40 60 4 4 4 4 4 25-100 25-100

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4