2N869A Search Results

2N869AXDCSM

Contextual Info: 2N869AXDCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

Contextual Info: <Se.mi- Conductor nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 PNP Transistors SATURATED SWITCHES Type No. Case Style 2N869 TO-52 2N869A VCBO VCEO VESO (VI Mm (V) Min (V) Min 25 TO-52 25

Contextual Info: 2N869AX Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2N869A

Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Contextual Info: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O

2N869AX

Contextual Info: 2N869AX Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2N869AXCSM

Contextual Info: 2N869AXCSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N869A

Contextual Info: 2N869A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: Back to Bipolar Small Signal 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage

2N869A

Abstract: 2N4453 2N869A JANTX
Contextual Info: r-1 I INCH-POUND ! I_ i MII-S-19500/283D A M Tk ifX M C k JT i 1i 25 June 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N869A AND 2N4453 JANTX AND JANTXV This amendment forms a part of MIL-S-19500/283D, dated

Contextual Info: 2N869AXCSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: 2N869A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N869AJAN, JTX 2N4453JAN, JTX Processed per MIL-S-19500 283 CRYSTALONCS PNP Silicon Small-Signal Transistor yf*308 HiQhway RonkDntoma, n.y. 11779 do w n e d «or l»Qh speed switching applications 2N869AJAN Device is on Product Discontinuance Notice

2N869A

Contextual Info: 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage

2N4854

Abstract: 2N4855 2N4453
Contextual Info: M O T O R OL A 2N4453 SC X S T R S /R 12E D I F t,3b755M 0001,450 Ô | T-A7-2Ì9 For Specifications, See 2N869A Data. 2N4854 2N4855 2N4854 — JAN, JTX, JTXV AVAILABLE CASE 654-07, STYLE 5 M A X IM U M R A T IN G S Rating Symbol Value Unit Collector-Emitter Voltage

bjt specifications

Abstract: 2N869A
Contextual Info: 2N869A Si PNP LP HF BJT 3.92 Transistors Bipolar Silicon PNP Low-Power High-Freq. Page 1 of 2 Enter Your Part # Home Part Number: 2N869A Online Store 2N869A Diodes Si PNP LP HF BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N4453

Abstract: 2N869A
Contextual Info: SEMICONDUCTOR! TECHNICAL DATA I 2N869A 2N4453. *^ CRYSTALONCS PNP Silicon Small-Signal Transistor 2805 Veteraris Highway Suite 14 Ronkonkoma, N.Y J1779 . . designed for high-speed switching applications. 2N869AJAN Device is on Product Discontinuance Notice

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N3012

Contextual Info: MOTOROLA SC XSTRS/R F igE D | b3b7ESM OOflba^O T | 2N3012 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage V cEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — Continuous

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N859

Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385