TO206AA Search Results

vcr7n

Abstract: J270 jfets SST271
Contextual Info: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000

2N2484UA

Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN

2N5114

Abstract: 2N5116 2N5115
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 2N5115 2N5116 MQ = JAN Equivalent MX = JANTX Equivalent

2N2907A

Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

2N4856

Contextual Info: T em ic 2N4856 JAN/JANTX/JANTXV Series siliconix N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

marking code vishay SILICONIX to-236

Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Contextual Info: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA

SFs SOT23

Contextual Info: 2 AE D • aTl?bUa QaQb4bM 1 H TELEDYNE CO M PO NENTS - T - 3 5 ~ - 2 S - TZ404 SEMICONDUCTOR _ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Pfaatic Package

digital controlled attenuator

Abstract: d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T
Contextual Info: 2flE » • awboa Doot-3is h m TELEDYNE COMPONENTS CDG4460 SEMICONDUCTOR 6-BIT VIDEO FREQUENCY DIGITAL CONTROLLED ATTENUATOR ORDERING INFORMATION 16-Pln Ceram ic Package | CPG4460J FEATURES APPLICATIONS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Data Latch

CHIP SM 4108

Abstract: SM 4108 sm 4109 un 5111 IC
Contextual Info: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ

SST201

Abstract: j204 siliconix
Contextual Info: T em ic J/SST201 Series S e m i c o n d u c t o r s N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary lo ss P a rt N um ber V c s io ff V ) V(BR)GSS M i n (V ) gfs M i n ( m S ) J/SST201 -0 .3 t o -1 .5 -4 0 0.5 0.2 J/SST202 -0 .8 to - 4

Contextual Info: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package

s t u 309d

Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
Contextual Info: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«

ss 7941

Contextual Info: EÒE TELEDYNE COMPONENTS D a ii7 b a a — OGOb4Qc] 4 • r T-29-25 SD1106 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD1106CHP SD1106DD SD1106AD Sorted Chips In Waffte Pack TO-2Q6AA TO-18 Package TO-237 Packaae ' FEATURES

Contextual Info: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP

Contextual Info: 2N4856JAN/JANTX/JANTXV Series Vishay Siliconix N-Channel JFETs 2N4856JAN 2N4856JANTX 2N4856JANTXV 2N4857JAN 2N4858JAN 2N4857JANTX 2N4857JANTXV 2N4858JANTX 2N4858JANTXV 2N4859JAN 2N4859JANTX 2N4859JANTXV 2N4860JAN 2N4860JANTX 2N4860JANTXV 2N4861JAN 2N4861JANTX

JR 3610

Abstract: RT 083 206af 44464
Contextual Info: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package

PW 2N

Abstract: SST4393 Q3060 marking 2n sot23 2N4392 4392 ic equivalent PW 2N 150 SST4391
Contextual Info: Tem ic 2N/PN/SST4391 Series S e m i c o n d u c l o r s N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 SST4391 PN4392 SST4392 PN4393 SST4393 Product Summary Part Number VGS off (V) r DS(on) Max (Q) iD(off) Typ (pA) to N T V p (n s) 2N/PN/SST4391 - 4 to -10 30

2N3797

Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D

2N2844

Abstract: 2N2843
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3b755M OOflbbOS 1 | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA 3 Drain (Case) MAXIMUM RATINGS Sym bol V a lu s U n it Drain-Source V olta g e Rating VDS 30 V dc Drain-Gate V oltage Vd g 30 V dc Gate-Source V olta g e

sst201

Abstract: J201 J202 J204 SST202 SST204 ultra low igss pA
Contextual Info: J/SST201 Series New Product Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 –0.3 to –0.9 –25 0.5 0.7 J/SST202 –0.8 to –4 –40 1 0.9

37654

Abstract: PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5
Contextual Info: PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 JPAD50 SSTPAD5 SSTPAD100 Product Summary Part Number IR Max pA PAD1 –1 PAD5/JPAD5/SSTPAD5 –5 PAD50/JPAD50 –50 SSTPAD100 –100 Features Benefits Applications D Negligible Circuit Leakage Contribution

Contextual Info: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive

J111

Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES