J112 Search Results

J111 national

Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 J112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.

J112

Abstract: J113 J111 transistor J112 Scans-00946
Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features

SAE J1128

Abstract: J1128 SAE-J-1128 parker 535-53DA02-303 SAE-J1128
Contextual Info: A. HONEYWELL PART NUMBER REV DOCUMENT D 0030760 CHANGED BY CH 14MAY07 CHECK CMH 5 3 5 -5 3 D A 0 2 -3 0 3 B B LEADWIRES 2 20 AWG, SAE J1128, TYPE TXL POLYETHYLENE INSULATION, 125’C RATED TEMP. HOUSING SAE # 360 BRASS, PASSIVATED ”0 ” RING AS 5 6 8 -9 0 6 , NITRILE RUBBER, 90 DUROMETER (PARKER 3 -9 0 6 , BUNA N OR EQUIVALENT)

J111

Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

Contextual Info: • bbS3=131 002400b TTT « A P X jm J112 b7E T> N APIER P H IL I P S/ D I SC R ET E ;v J113 N - C H A N N E L S IL IC O N F I E L D - E F F E C T T R A N S IS T O R S Symmetrical silicon n-channel junction F E T s in plastic TO-92 envelopes. They are intended for

IN60A

Contextual Info: Cable Fuses CABLEPRO CABLE PROTECTOR FUSES RATED 32V Available in AWG and metric cables Specifications Voltage Rating: 32 VDC Cable Types Available SAE J1127 STX , SAE J1128 TXL , ISO6722: Type FL2G Interrupting Rating: 2000A @ 32 VDC Operating Temperature Range:

J112

Abstract: transistor J112 J112 equivalent J1-12 J112K
Contextual Info: J112 RoHS Compliant 20.2 x 5.3 x 12.8 mm E197851 Features • • • • Low power consumption .12W Ultra light weight Narrow width for high density mounting UL/CUL certified Dimensions shown in mm. Dimensions are shown for reference purposes only. Specifications and availability subject to change without notice.

J201 N-channel JFET

Abstract: MMBFJ202 BF244 J309 5486 J309-J310 4392 p-channel jfet rf MMBFJ211 MMBF4091
Contextual Info: Section 5 JFET Datasheets J105 / J106 / J107 / JFTJ105 N-Channel Switch . 5-3 J108 / J109 / J110 / MMBFJ108 N-Channel Switch . 5-7 J111 / J112 / J113 / MMBFJ111 / J112 / MMBFJ113 N-Channel Switch . 5-11

J113 equivalent

Abstract: transistor J111 J111 transistor J112 SMPJ113 transistor j113 SMPJ111 J112 J113 NJ132
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-51 B-51 01/99 J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 JFET Sw it ch e s P/ N 2N5114 2N5115 2N5116 2N5434 J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 PN4391 PN4392 PN4393 SST111 SST112 SST113 SST108 SST109 SST110 SST174

Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

Contextual Info: L ir m TECHNOLOGY J1124/LT1125 D u a l/Q u a d Low Noise, High S pe e d Precision O p A m ps DCSCRIPTIOn F€RTUR€S 100% Tested Low Voltage Noise Slew Rate Gain Bandwidth Product Offset Voltage, Prime Grade Low Grade High Voltage Gain Supply Current Per Amplifier

c3 MARKING CODE

Abstract: c3 marking
Contextual Info: T e m ic J/SST lll Series Siliconix N-Channel JFETs J ill J112 J113 SST111 SST112 SST113 Product Summary P a r t N u m b er V g S o£F (V) r DS(on) M ax (Q ) ii)(ofr> i y p (pA) toN Typ (n s) J/S S T lll - 3 to - 1 0 30 5 4 J/SST112 - 1 to - 5 50 5 4 J/SST113

J1128

Abstract: SAE J1128 sae j1127 J1127 SAE J1128 wire
Contextual Info: Cable Fuses CABLEPRO Cable Protector Fuses Rated 32V Specifications Cable Fuses Voltage Rating: 32 VDC Cable Type: SAE J1127 4 & 6 AWG & SAE J1128(8 and 6 AWG) Interrupting Ratings: 2000A @ 32 VDC Operating Temperature Range: -40˚C to + 125˚C The CABLEPRO fuse is designed to replace conventional wire

SST113

Abstract: SST112 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

J111

Abstract: J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112
Contextual Info: J111 J112 J113 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction field-effect transistors in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.

J112 jfet

Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc

Contextual Info: 7110flEb □ G b ? c17S 7T3 « P H I N J in J112 J113 y V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

SAE J1128 wire

Abstract: 049610 SAE J1128 19mm2 ISO6722
Contextual Info: Cable Fuses CABLEPRO CABLE PROTECTOR FUSES RATED 32V Available in AWG and metric cables Specifications Voltage Rating: 32 VDC Cable Types Available SAE J1127 STX , SAE J1128 TXL , ISO6722: Type FL2G Interrupting Rating: 2000A @ 32 VDC Operating Temperature Range:

J113

Abstract: J112 J111 DU240
Contextual Info: • 1^53=131 DÜ240Gb TTT « A P X J111 J112 J113 b7E T> N AMER PHILIPS/DIS CRET E N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.

j111

Contextual Info: 711002b QGbV^VS 7 ci3 J111 J112 J113 IPHIN N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. Features • High speed switching

transistor j112

Abstract: J112 jfet j112
Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

marking code J111

Abstract: J113 equivalent c3 marking J/SST113 SST111 C1 to236 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES