BF244 Search Results

BF244 equivalent

Abstract: bf244 BF244A equivalent BF244B equivalent BF244 JFET BF244C equivalent BF244C 85S4735 BF244A bf244b
Contextual Info: SILICONIX INC 18E » • 85S4735 001381=5 T ■ BF244 SERIES .OTSSSb N-Channel JFETs _ The BF244 Series of n-channel JFETs Is selected Into narrow current ranges to simplify design and biasing requirements of high performance JFET amplifier stages. The BF244A, BF244B, and

F245A

Abstract: BF244 BF245 BF245C JFET BF245B BF245 motorola
Contextual Info: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M R A TIN G S Rating Sym bol Value U nit D rain-S ource Voltage VDS ±30 Vdc Dram -G ate Voltage vdg 30 Vdc G ate-Source Voltage vgs 30 Vdc id 100 m Adc

BF244A

Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
Contextual Info: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.

bf244

Contextual Info: BF244A / BF244B / BF244C BF244A BF244B BF244C S G TO-92 D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings*

BF244B

Contextual Info: F6 9 -9 7 Small Outline Surface Mount Package Devices N-CHANNEL SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS BVgss Device Type VgS(OFF) Igss Min • dss Conditions Limits Max @ V gs Min Max V DS to Min Max @ V ds (nA) (V) (V) (V) (V) (nA) (mA) (mA) (V)

2SK163 spice model

Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed

CGD923

Abstract: 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653
Contextual Info: セミコンダクタ RFマニュアル第6版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年5月 リリース日付：2005年5月 ドキュメント注文番号： 9397 750 15125 セミコンダクタ RF製品担当副社長兼ジェネラル・マネージャ

RF8109

Abstract: 2SK43 vHF amplifier module 2450Mhz BFG480W BB200 varicap diode PMBFJ174 2SK163 3SK290 BB145 bga2714
Contextual Info: RFマニュアル第8版 RF 製品のアプリケーションおよびデザイン・マニュアル 2006 年 7 月 リリース日付：2006 年 7 月 Henk Roelofs RF製品担当副社長兼ジェネラル・マネージャ 概要 各版では RF マニュアルの改善に努めています。この第 8 版でも同様です。さらに多くのアプリケーションベ

2SK163-L

Abstract: BFG480W BFG135 amplifier BB143 Varicap BB141 BB145 2SK163 3SK290 BFP180
Contextual Info: RFマニュアル第7版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年12月 リリース日付：2005年12月 Henk Roelofs RF製品担当副社長兼ジェネラル・マネージャ 概要 RFマニュアル第7版をご利用いただきありがとうございます。当社が対話型操作によるアプリケー

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

bu2527af

Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Contextual Info: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní

TP4221

Abstract: 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC
Contextual Info: •• - f * ALLE6R0 MICROSYSTEMS INC' 33E D • • .'••■•'v v Q5G433Ô QOGSb'ib Ô « [ AL GR ; if.: ■ ■ ïâ M S e M ■Æ ÊÊm '■"h ^ - o s T O *9 2 / T O - 2 2 6 A A ELECTRICAL CHARACTERISTICS a t T\ = 25°C A - ^GSioff Óóvlce Type V)

dna100

Abstract: mpf103 MPF107
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SPRA GU E. T3 » • Q50433Ô S E M I C O N D S / ICS D G ü 3 b Q 2 7 ■ ALGR 2> 93D 03602 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

MPS5771

Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage

bf244

Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage

INVERTER UV LAMP 94V0

Abstract: YC670R YC-670R BXA-12665-5M BF327 nec 1026 BF617 BF3380-24B BF325-HG CF20277-28B
Contextual Info: Inverters for CCFL and UV Lamps Diameter Length Cold Cathode Fluorescent Lamps and Inverters Tri-Phosphor‑RGB White Lamps Start Dia. Length Volts mm (mm) (V) 125 700 218 1250 226 1275 228 1300 2.0 277 1560 292 1650 305 1021 325 1830 140 730 160 800 2.2

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment