MMBT3905
Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365
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s01130bcf29o-236bcf30+13bcw61a2n1132a2n29042n2905mmbt3905mmbt29042n2906 to-92lm3661tl-1.402n2907 pnp transistor to 922n3906mps3905s2e transistortransistor 2n2905
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1S44
Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
Contextual Info: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200
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b501130t-01-011n461ado-35+81n462a1n463a1n6591s441n6611s9201n6601s921
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SOIC-16
Abstract: SOIC16 National Semiconductor Discrete catalog
Contextual Info: bûF. D m b501130 DGBSSMG 755 H N S C 5 Multiple Bipolar Transistors— Quad NATL SEMICON] DISCRETE) li r e l c Device Type VcEfSAT) v r.F !c *T C qb (V) Min (A) Max Min mA MHz Min PF M ax 30 0.5 100 150 200 8 0.4 10 150 CD7 SOIC-16 0.4 10 150 CD3 TO-116
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b501130soic-16o-116mmpq6502+7mpq6502mmpq6700mpq6700mmpq2369mpq2369soic16national semiconductor discrete catalog
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NDT453N
Abstract: JJS-100 A14S
Contextual Info: June 1996 National Sem icon d uctor" NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.
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ndt453not-223bsg113dgo401lb+2jjs-100a14s
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J111 national
Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.
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mmbfj111mmbfj112mmbfj113ot-23+8d0m0t33j111 nationalj112j11325ccj111mark 6c sot-23k20a
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diode 8109
Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Contextual Info: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp7061l/ndb7061lbsd113d004031b+5bs01130diode 8109ddh0312ndp7061lw9 diode
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NPN RF Amplifier
Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A
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lsg113b501130npn rf amplifiery-parameter+3mmbth20mpsh20u407
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mmbd
Contextual Info: Semiconductor' FDH / FDLL 600 FDH600 / FDLL600 D iscrete POWER & Signal Technologies National C O L O R B A N D M A R K IN G D EV ICE FDLL600 1ST B A N D RED 2N D B A N D W H IT E LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION
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do-35ll-34fdll600mmbd1201-1205+2004d5l1mmbd
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027Q
Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS
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27E SOT-23
Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
Contextual Info: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e
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bcw68got-23b5d1130ls01130+527e sot-2327e 9 sot23ck200501mtt092
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l5 transistor PNP
Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high
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mpsa64mmbta64ot-23pzta64+4ot-223004g77sl5 transistor pnppnp darlington sot-23
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NDB7052L
Abstract: NDP7052L
Contextual Info: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using
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NDT452P
Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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ndt452p125-cb501130 |
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NZT6715
Abstract: TN6715A
Contextual Info: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.
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MMBT2907A
Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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pn2907ammbt2907apzt2907aot-23+7ot-223mmpq2907nmt2907bs0113ddd40ti30bs01130t092
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NZT6729
Abstract: TN6729A
Contextual Info: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.
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tn6729anzt6729o-226ot-223+3004g745b5d1130dm0743
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NDT410EL
Contextual Info: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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diode RN 1220
Abstract: NDT455N diode 561
Contextual Info: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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ndt455not-223lsd113d00401e+2diode rn 1220diode 561
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025Q
Abstract: NDS8425
Contextual Info: June 1996 National ADVANCE INFORMATION Semiconductor" NDS8425 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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nds8425bs0113g025q |
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TN6717A
Abstract: NZT6717
Contextual Info: TN6717AI NZT6717 & D iscrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6717 TN6717A SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.
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nzt6717ot-223ls01130o-226+1tn6717a
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NDS9435A
Contextual Info: N a tio n a l Semiconductor M ay 1996 " NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Contextual Info: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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supersot-3
Abstract: 2T3 transistor NDS335N FR 014 S0113D
Contextual Info: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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nds335not-23nds33snsupersot-3+32t3 transistorfr 014s0113d
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MMBTA56
Abstract: MPSA56 PZTA56
Contextual Info: MPSA56 1MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
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pzta56ot-223d0m0774mmbta56+1mpsa56
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