PZT2907A Search Results

MMBT2907A

Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

PZT2907A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2907A Preliminary PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. „ ORDERING INFORMATION

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is

marking code nt amplifier

Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

PZT2907A

Abstract: 2907a TRANSISTOR PNP MARKING 2907A
Contextual Info: PZT2907A PNP Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

MARKING P2F

Abstract: transistors sot-223 06a
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation

transistors sot-223 06a

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZT2222A TRANSISTOR NPN FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.6 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR NPN SOT-223 FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

p2f sot-223

Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3
Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Contextual Info: PZT2222A SOT-223 Transistor NPN 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — — Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage

PZT2907

Abstract: PZT2907A PZT2222 PZT2222A
Contextual Info: PZT2907 / PZT2907A PZT2907 / PZT2907A Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-09 Power dissipation Verlustleistung 6.5±0.2 1.65 3±0.1 Plastic case Kunststoffgehäuse

Contextual Info: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced

PN2907A

Contextual Info: PN2907A MMBT2907A TO-92 SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 SOT-6 Bi Mark: 200 SOIC-16 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from

transistor c-111

Abstract: TRANSISTOR 111
Contextual Info: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2907A PNP switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet PNP switching transistor PZT2907A FEATURES PINNING • High current max. 600 mA

PZT2907

Abstract: PZT2907A
Contextual Info: 711002t. DDbTTbS IPHIN PZT2907 PZT2907A SILICON PLANAR EPITAXIAL TRANSISTORS PNP m edium pow er transistors in a m icro m in ia tu re SMD envelope SO T-223 . Designed p rim a rily fo r high-speed sw itching and d rive r applications. ~ v CB0 m ax. 60 V 40 V

Contextual Info: PZT2907A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)150m

transistors sot-223 06a

Abstract: ON MARKING P2F P2F MARKING
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation

Contextual Info: S E M IC O N D U C T O R tm MMBT2907A B / MMPQ2907 / NMT2907 / PZT2907A SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as a g e n e ra l p u rp o se a m p lifie r a n d s w itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d

PZT2222A

Abstract: PZT2907A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A SOT-223 TRANSISTOR PNP FEATURES y y 1 1. BASE Epitaxial planar die construction Complementary PNP Type available(PZT2222A) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

MMBT2907A

Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16
Contextual Info: PN2907A MMBT2907A PZT2907A C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

Contextual Info: S E M IC O N D U C T O R tm MMBT2907A PZT2907A cjiàiiÌÌll SOT-23 . B / MMPQ2907 / NMT2907 / PZT2907A w B SOT-223 Mark: 2F PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l p u rp o s e a m p lifie r a n d s w itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d