S0113D Search Results

Contextual Info: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max

TN6717A

Abstract: NZT6717
Contextual Info: TN6717AI NZT6717 & D iscrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6717 TN6717A SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

NDS8839H

Abstract: Complementary MOSFET Half Bridge
Contextual Info: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

NDH8302P

Contextual Info: f i National Semiconductor" June 1996 ADVANCE INFORMATION NDH8302P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.

NDS332P

Abstract: NDS332
Contextual Info: e* M ay 1996 N a tio n a I Semiconductor" PRELIMINARY NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using Nationals