BC859C Search Results

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

Contextual Info: BC859CR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE POWER 30/45/65 Volts 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices:BC846W/BC847W/BC848W/

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices : BC846AW/BC847AW/BC848AW/

BCB60

Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

Contextual Info: BC859CW Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.420 h(FE) Max. Current gain.800

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

13c MARKING

Abstract: marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A
Contextual Info: Marking codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 1 A BC846A 4B BC859B 8 AC CMSZ5226B 1 A8 CMSZ5250B 4C BC859C 8 B1 CMSZ5222B 1 B BC846B 4E BC860A 8 BC CMSZ5227B 1 B8 CMSZ5251B 4F BC860B 8 C1 CMSZ5223B 1 C8 CMSZ5252B

marking code nt amplifier

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE POWER 30/45/65 Volts 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices : BC846AW/BC847AW/BC848AW/

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration

200mWatts

Abstract: transistor 56B marking
Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

BC859 smd

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E

Contextual Info: BC859C Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m

Contextual Info: BC859CL Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

BC860

Abstract: BC859 BC859A BC859B BC859C BC860A BC860B BC860C
Contextual Info: CDU BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A - 4A BC859B = 4B BC859C - 4C BC860 = 4H BC860A ss 4E PACKAGE OUTLINE DETAILS ALL DIM ENSIO NS IN m m BC860B = 4F BC860C = 4G Pin configuration 1 a BASE 2 = EMITTER 3 « COLLECTOR

BC558A

Abstract: 2N44Q3 bc327-16 bc558c BC556A 2N4401 surface mount BC337 sot23 BC556B SOT23 BC338-16 MP8A06
Contextual Info: S M A L L SIGNAL BIPOLAR TRANSISTORS PACKAGE Leaded Surface Mount Device TO-92 (SOT-23) # % hFE Veto (Voli) NPN PNP NPN PNP lc (mA) Low Noise BC549B BC559B BC849B BC859B 100 330 30 BC549C BC559C BC849C BC859C 100 600 2N4124 2N4126 Switchino 25 30 40 max.

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

bcp55 to

Abstract: bcp55 BCV72-K8 BC859C BC860C BCP52 BCP53 BCP54 BCP56 BCV26
Contextual Info: This I Material cr tn ab Pro Electron Surface Mount Bipolar Devices -1 fc-1 UJ CD Copyrighted a□ jr □ In nj -c: ru j] Device No. SOT-23 Mark I ' ces * 'CBO v h fe V CB (nA) Max (V) hfe Min @ Max 'c & VcE (mA) (v) V GE(SAT) & Max BE(SAT) . w V BE(ON)