BC857 Search Results
BC857 Datasheets (500)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BC857 | AUK | PNP Silicon Transistor (General purpose application Switching application) | Original | 93.58KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Diotec | Surface mount Si-Epitaxial PlanarTransistors | Original | 124.65KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Fairchild Semiconductor | PNP general purpose transistors | Original | 107.53KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor | Original | 60.34KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor | Original | 99.8KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | General Semiconductor | Small Signal Transistors (PNP) | Original | 264.72KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Infineon Technologies | NPN Silicon AF Transistors | Original | 221.76KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Kexin | PNP General Purpose Transistor | Original | 38.98KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Korea Electronics | General Purpose Transistor | Original | 401.21KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | NXP Semiconductors | BC857 - PNP general purpose transistors - Complement: BC847 ; fT min: 100 MHz; hFE max: 800 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V | Original | 91.73KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Philips Semiconductors | PNP general purpose transistors | Original | 74.18KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Philips Semiconductors | PNP General Purpose Transistor | Original | 74.31KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Philips Semiconductors | PNP general purpose transistors | Original | 52.08KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Philips Semiconductors | Silicon Planar Epitaxial Transistor | Original | 259.28KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Philips Semiconductors | Silicon Planar Epitaxial Transistor | Original | 95.47KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Rectron Semiconductor | Original | 23.16KB | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Rectron Semiconductor | PNP Silicon Planar Epitaxial Transistors | Original | 77.56KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857 | Sinyork | Mini size of Discrete semiconductor elements | Original | 506.13KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC857 Price and Stock
Nexperia BC857BS,115Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC857BS,115 | 78,330 | 1 |
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Buy Now | ||||||
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BC857BS,115 | Tape & Reel | 498,000 | 53 Weeks, 1 Days | 3,000 |
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Buy Now | ||||
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BC857BS,115 | 987,000 | 32 Weeks | 3,000 |
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Buy Now | |||||
Diodes Incorporated BC857BT-7-FTransistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC857BT-7-F | 10,824 | 1 |
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Buy Now | ||||||
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BC857BT-7-F | 71,991 |
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Buy Now | |||||||
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BC857BT-7-F | 3,000 | 46 Weeks | 3,000 |
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Buy Now | |||||
Diodes Incorporated BC857BS-7-FTransistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC857BS-7-F | 8,650 | 1 |
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Buy Now | ||||||
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BC857BS-7-F | Bulk | 50 |
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Get Quote | ||||||
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BC857BS-7-F | 3,000 |
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Get Quote | |||||||
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BC857BS-7-F | 18,000 | 46 Weeks | 3,000 |
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Yangzhou Yangjie Electronics Co Ltd BC857AWTransistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT323 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC857AW | 925 | 25 |
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Buy Now | ||||||
Infineon Technologies AG BC857BL3E6327XTMA1Transistor: PNP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC857BL3E6327XTMA1 | 15,000 |
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Get Quote | |||||||
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BC857BL3E6327XTMA1 | 13 Weeks | 15,000 |
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Get Quote | ||||||
BC857 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BC857BV
Abstract: BC847BV BC857BV-7 J-STD-020A
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Original |
bc857bvbc847bvot-563j-std-020a+3 | |
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Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS. |
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bc847qasdfn1010b-6ot1216bc857qas+2 | |
BC857 st
Abstract: BC857 DSA00103967
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Original |
bc857ot-23bc857 stdsa00103967 | |
BC847UF
Abstract: BC857UF
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Original |
bc857ufbc847ufot-323fkst-3042-001+2 | |
BC857
Abstract: BC846 BC847 BC848 BC856 BC856A BC856B BC857A BC857B BC858
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Original |
m3d088bc856bc857bc858+7 | |
TRANSISTOR SMD MARKING CODE 3f
Abstract: pb 3g smd transistor smd TRANSISTOR code marking 3F TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE rd 301 marking code PNP transistor TRANSISTOR SMD MARKING CODE 3L BC847F BC848F BC856BF
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Original |
m3d425bc856fbc857fbc858f+13 | |
BC857B
Abstract: BC847B BC857C
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Original |
bc857bot-23bc847bbc857c | |
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Contextual Info: BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER Collector Base Voltage BC856 BC857 BC858, BC859 Collector Emitter Voltage |
Original |
bc856bc859ot-23bc857+1 | |
BC856BW
Abstract: General Purpose Transistors BC846W BC847W BC856AW BC856W BC857AW BC857BW BC857CW BC857W
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OCR Scan |
bc856wbc857wot323bc846w+7 | |
pnp k3w
Abstract: BC857BSQ-7-F
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bc857bsaec-q101ot363j-std-020+5 | |
BC858AT
Abstract: BC848T Q 817 BC856T BC857A BC858T 251 3j BC858BT BC846T BC847T
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Original |
m3d173bc856tbc857tbc858t+9 | |
UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
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Original |
bc847bbc857bumt222atransistor 1p+6 | |
BC857S
Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
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Original |
bc857ssc70-6cbvk741b019f63tnr+1 | |
BC857
Abstract: Transistor BC847 BC847 SOT23
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Original |
bc857bc847ot-23kst-2010-000+4 | |
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BC858CDW1T1
Abstract: BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1
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bc856bdw1t1bc857bdw1t1bc857cdw1t1bc858bdw1t1+5 | |
TA150DC
Abstract: BC856BW
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Original |
bc856aw/bwbc857aw/bw/cwbc858aw/bw/cwot-323+8 | |
BC856BWContextual Info: MCC Micro Commercial Components BC856AW/BW BC857AW/BW/CW BC858AW/BW/CW omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • PNP General Purpose Transistors Ideally Suited for Automatic Insertion |
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bc856aw/bwbc857aw/bw/cwbc858aw/bw/cwot-323+7 | |
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Contextual Info: BC847CS/BC857CS GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 150 mW FEATURES • General Purpose Amplifier Applications • Collector Current IC = -100mA • MECHANICAL DATA Case: SOT-363 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.006 grams |
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bc847cs/bc857cs-100maot-363mil-std-750+2 | |
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Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 |
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bc856bc857bc858bc859+5 | |
BC648BContextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking |
OCR Scan |
bc847bbc857b0dlb713o-220fn+3 | |
BC857
Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
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Original |
bc856bc858bc860bc856a3a+14 | |
BC856BW
Abstract: BC857CW BC857W BC846W BC847W BC856AW BC856W BC857AW BC857BW 301 marking code PNP transistor
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m3d187bc856wbc857wot323+10 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR NPN and PNP FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P |
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ot-363bc847pnbc847wbc857w | |
BC856BWContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856AW, BW TRANSISTOR BC857AW, BW,CW BC858AW, BW,CW PNP SOT-323 1. BASE FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications |
Original |
ot-323bc856awbc857awbc858aw+4 | |