FDG6302P Search Results

FDG6302P

Abstract: SC70-6 Fairchild Semiconductor - Process
Contextual Info: July 1999 FDG6302P Dual P-Channel, Digital FET General Description Features -25 V, -0.14 A continuous, -0.4 A peak. RDS ON = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's

land pattern sc70-6

Abstract: SC70-6 CBVK741B019 F63TNR FDG6302P T-23
Contextual Info: November 1998 FAIRCHILD S E M IC O N D U C T O R tm FDG6302P Dual P-Channel, Digital FET G eneral D escription Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

CBVK741B019

Abstract: F63TNR FDG6302P SC70-6
Contextual Info: July 1999 FDG6302P Dual P-Channel, Digital FET General Description Features -25 V, -0.14 A continuous, -0.4 A peak. RDS ON = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's

Small Signal MOSFETs

Contextual Info: November 1998 FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Contextual Info: g A IR C H IL D Ju|y 1999 SEM IC O N D U C TO R tm FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

CBVK741B019

Abstract: F63TNR FDG6302P SC70-6
Contextual Info: July 1999 FDG6302P Dual P-Channel, Digital FET General Description Features -25 V, -0.14 A continuous, -0.4 A peak. RDS ON = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's

LS025

Abstract: ci 415A FDG6302P SC70-6
Contextual Info: July 1999 F = A IR O H II_ D SEMICONDUCTOR tm FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

PART NUMBER MARKING SC70-6

Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching

CBVK741B019

Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Contextual Info: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Marking Code m sc70-6

Abstract: PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P SC70-6
Contextual Info: FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel

SC70-6 SSOT6

Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and

CBVK741B019

Abstract: F63TNR FDG6302P FDG6308P SC70-6 marking code 04 sc70-6
Contextual Info: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.

Contextual Info: FDG316P P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Contextual Info: FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description Features These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low

CBVK741B019

Abstract: F63TNR FDG311N FDG6302P SC70-6
Contextual Info: FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

CBVK741B019

Abstract: F63TNR FDG327N FDG6302P SC70-6
Contextual Info: FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use

FSA642

Abstract: FDMA1024NZ diagram circuit usb mp3 player with radio fm lcd CFL inverter circuit schematic diagram FAN5646 FDC610PZ block diagram 3x3 matrix keypad and microcontroller FDC658AP CFL 12v inverter circuit schematic diagram free pwm DC-DC SC70-5
Contextual Info: PORTABLE SOLUTIONS w w w. f a i r c h i l d s e m i . c o m INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products

CFL inverter circuit schematic diagram

Abstract: FDV301N SOT23 T7525 codec 7525 IGBT application note AN-9006 CFL 12v inverter circuit schematic diagram free DC 12V layout amplifier mp3 player usb diagram circuit usb mp3 player with radio fm lcd FPF2195 AN-7525
Contextual Info: P O RTA B L E S O L U T I O N S FC-7319_Portable_Bro.indd 1 1/17/08 4:29:01 PM FC-7319_Portable_Bro.indd 2 1/17/08 4:29:29 PM INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

BC847S

Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
Contextual Info: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier

Marking Code m sc70-6

Abstract: CBVK741B019 F63TNR FDG326P FDG6302P SC70-6
Contextual Info: FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.5 A, –20 V.

Contextual Info: SC70-6 Tape and Reel Data SC70-6 Packaging Configuration: Figure 1.0 Packaging Description: Customized Label SC70-6 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated