FDC610PZ Search Results
FDC610PZ Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDC610PZ | Fairchild Semiconductor | P-Channel PowerTrench MOSFET | Original | 409.08KB | 6 |
FDC610PZ Price and Stock
onsemi FDC610PZTransistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC610PZ | 177 | 1 |
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FDC610PZ | 12,000 | 3,000 |
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FDC610PZ | Tape & Reel | 35 Weeks | 3,000 |
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FDC610PZ | 807 |
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FDC610PZ | Bulk | 6,108 | 1 |
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| FDC610PZ | Cut Tape | 3,000 |
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| FDC610PZ | Tape & Reel | 3,000 |
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FDC610PZ | Bulk | 2 Weeks | 20 |
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FDC610PZ | Reel | 52 Weeks | 9,000 |
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FDC610PZ | 13,821 |
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FDC610PZ | 250 | 1 |
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FDC610PZ | 200 |
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FDC610PZ | 2,715 | 1 |
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FDC610PZ | 99 Weeks | 9,000 |
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FDC610PZ | 53 Weeks | 3,000 |
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FDC610PZ | 53 Weeks | 3,000 |
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FDC610PZ | 186,000 |
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FDC610PZ | 1,163 | 1 |
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FDC610PZ | 13,821 |
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onsemi FDC610PZ-GFDC610PZ-G |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC610PZ-G | 320,053 | 1,362 |
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| FDC610PZ-G | 2,694 | 1,362 |
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| FDC610PZ-G | 2,594 | 1,362 |
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FDC610PZ-G | 325,341 | 1 |
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FDC610PZ-G | 186,000 |
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onsemi FDC610PZ_PGFDC610PZ-PG |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC610PZ_PG | 5,050 | 1,722 |
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onsemi FDC610PZ-PGFDC610PZ - P-CHANNEL POWERTRENCH MOSFET 30V - Tape and Reel (Alt: FDC610PZ-PG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC610PZ-PG | Tape & Reel | 6,000 |
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FDC610PZ-PG | 5,050 | 1 |
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FDC610PZ-PG | 9,000 |
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Fairchild Semiconductor Corporation FDC610PZTrans MOSFET P-CH 30V 4.9A 6-Pin TSOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC610PZ | 150 |
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FDC610PZ | 1,700 |
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| FDC610PZ | 148 |
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| FDC610PZ | 71 |
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FDC610PZ | 36,770 |
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FDC610PZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDC610PZ tm P-Channel PowerTrench MOSFET –30V, –4.9A, 42mΩ Features General Description ̈ Max rDS on = 42mΩ at VGS = –10V, ID = –4.9A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has |
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FSA642
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