BC856B Search Results
BC856B Datasheets (194)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BC856B | Central Semiconductor | SMD Small Signal Transistor PNP Low Noise | Original | 116.68KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Diodes Incorporated | PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR | Original | 43.14KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Diodes Incorporated | TRANSISTOR PNP 65V .1A SMT | Original | 76.33KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Diodes Incorporated | PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 | Original | 200.01KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Diotec | Surface mount Si-Epitaxial PlanarTransistors | Original | 124.65KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Fairchild Semiconductor | Switching and Amplifier Applications | Original | 60.34KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Fairchild Semiconductor | PNP EPITAXIAL SILICON TRANSISTOR | Original | 67.07KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | General Semiconductor | Small Signal Transistors (PNP) | Original | 264.72KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Infineon Technologies | SOT23 package | Original | 79.88KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Infineon Technologies | Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; VCEO (max): 65.0 V; VCBO (max): 80.0 V; IC(max): 100.0 mA; ICM (max): 200.0 mA; | Original | 898.3KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Kexin | PNP Transistor | Original | 66.76KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Micro Commercial Components | PNP Small Signal Transistor 310mW | Original | 106.35KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | NXP Semiconductors | BC856B - PNP general purpose transistors - Complement: BC846B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 65 V | Original | 91.73KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | On Semiconductor | Dual General Purpose Transistors | Original | 108.76KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Philips Semiconductors | PNP general purpose transistors | Original | 49.44KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Philips Semiconductors | PNP General Purpose Transistor | Original | 74.31KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Rectron Semiconductor | PNP Silicon Planar Epitaxial Transistors | Original | 77.56KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Siemens | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | Original | 278.12KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Siemens | NPN Silicon AF Transistor | Original | 560.68KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC856B | Taitron Components | SMD General Purpose Transistor (PNP) | Original | 165.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC856B Price and Stock
Nexperia BC856BS,115Transistor: PNP x2; bipolar; 65V; 0.1A; 300mW; SC88,SOT363,TSSOP6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC856BS,115 | 18,006 | 1 |
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BC856BS,115 | 30,000 | 3,000 |
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| BC856BS,115 | 3,000 | 3,000 |
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BC856BS,115 | 30,000 | 30 Weeks | 3,000 |
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| BC856BS,115 | 3,000 | 30 Weeks | 3,000 |
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BC856BS,115 | 322,300 | 1 |
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BC856BS,115 | 30 Weeks | 33,000 |
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BC856BS,115 | 666,000 | 32 Weeks | 3,000 |
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Diodes Incorporated BC856BW-7-FTransistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC856BW-7-F | 9,000 | 1 |
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BC856BW-7-F | Bulk | 250 |
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BC856BW-7-F | 3,021 |
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| BC856BW-7-F | 120 | 1 |
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BC856BW-7-F | 36 |
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Continental Device India Ltd TBC856BTransistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TBC856B | 960 | 20 |
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Luguang Electronic Technology Co Ltd BC856BTransistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC856B | 25 |
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Diotec Semiconductor AG BC856BTransistor: PNP; bipolar; 65V; 0.1A; 250mW; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC856B | 1 |
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BC856B | 657,000 | 9,000 |
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| BC856B | 18,900 | 5,300 |
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BC856B |
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BC856B | 27,000 | 1 |
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BC856B | 2,400 |
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| BC856B | 2,400 |
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BC856B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BC858CDW1T1
Abstract: BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1
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bc856bdw1t1bc857bdw1t1bc857cdw1t1bc858bdw1t1+5 | |
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Contextual Info: BC856BS PNP GENERAL PURPOSE DUAL TRANSISTORS VOLTAGE 65 Volts POWER 150 mWatts MECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.006 gram Marking :56S ABSOLUTE RATINGS Parameter Symbol Value Units Collector - Emitter Voltage |
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bc856bsot-363mil-std-7502011-rev | |
BC857
Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
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bc856bc858bc860bc856a3a+14 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC856BS PNP Plastic-Encapsulate SOT-363 G C B A H M K J D L DIMENSIONS Revision: A 2013/01/08 |
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bc856bsot-363 | |
IC 723 pin out diagram
Abstract: BC856BM3T5G
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bc856bm3t5got-723bc856bm3/dic 723 pin out diagram | |
BC856BWContextual Info: SPICE MODELS: BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC856AW - BC858CW Lead-free Green PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · Ideally Suited for Automatic Insertion SOT-323 Complementary NPN Types Available BC846W-BC848W |
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bc856awbc856bwbc857awbc857bw+4 | |
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Contextual Info: BC856BW-AU ~ BC857CW-AU PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA Complimentary NPN Devices : BC856BW-AU/BC857AW-AU Series |
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bc856bw-aubc857cw-au100mabc856bw-au/bc857aw-au+6 | |
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Contextual Info: BC856BS PNP GENERAL PURPOSE DUAL TRANSISTORS 65 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications 0.087 2.20 0.074(1.90) • Collector current Ic = 100mA • In compliance with EU RoHS 2002/95/EC directives 0.0 8 7 (2 .2 0 ) 0.0 7 8 (2 .0 0 ) |
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bc856bs100ma2002/95/ecot-363+2 | |
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Contextual Info: BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device |
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bc856bm3t5gbc856bm3/d | |
k3w bc857
Abstract: pnp k3w marking code K3W BC856BW AF MARKING CODE amplifier marking code D BC857AW BC857CW marking AF BC856AW
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bc856awbc858cwbc856bwbc857aw+10 | |
bc857 sot363
Abstract: BC856 BC857 BC858 bc856bdw3b BC857CDW BC857BDW bc856b
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bc856bdwot-363sc-88bc856+8 | |
marking 5ft sot363
Abstract: sot-363 MARKING marking 5ft 5Ft marking SOT-363
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bc856bs200mwot-363marking 5ft sot363+3 | |
bc856b
Abstract: IC 8002
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bc807-16bc807-25bc807-40bc808-16+6 | |
marking code ndContextual Info: BC856BS PNP GENERAL PURPOSE DUAL TRANSISTORS VOLTAGE 65 Volts POWER 150 mWatts $785(6 • General purpose amplifier applications • Collector current Ic = 100mA 0.087(2.20) 0.074(1.90) • Lead free in comply with EU RoHS 2002/95/EC directives. 0.010(0.25) |
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bc856bs100ma2002/95/eciec61249+4 | |
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bc857 sot363
Abstract: BC856B BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1 BC858CDW1T1
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363/scbc856bdw1t1bc857bdw1t1bc857cdw1t1+7 | |
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Contextual Info: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C Features • · · · Ideally Suited for Automatic Insertion Complementary NPN Types Available BC846-BC848 For Switching and AF Amplifier Applications |
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bc856abc858cbc856bbc857a+4 | |
2S321
Abstract: 2SB646 2N5111 2n3063 ZTX50 LOW-POWER SILICON PNP 475 50K ROHM 2N1654 2N5857
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nb223xjnb223yjbc556pbc856br+11 | |
3F SOT3
Abstract: bc557 3f series surface mount transistor BC858CDW1T1
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bc856bdw1t1bc857bdw1t1bc857cdw1t1bc858bdw1t1+5 | |
pnp k3w
Abstract: BC856BW BC856AW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW
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bc856awbc856bwbc857awbc857bw+5 | |
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Contextual Info: BC856BWT1, BC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http://onsemi.com COLLECTOR 3 PNP Silicon 1 BASE These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is |
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bc856bwt1sbc856bwt1bc857bwt1sbc857bwt1+3 | |
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Contextual Info: BC856BR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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bc856brfreq150m | |
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Contextual Info: BC856B Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).65 @I(C) (A) (Test Condition)100m |
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bc856bfreq100m | |
BC856
Abstract: BC856BWT1G BC856A BC856BWT1 BC857 BC857B BC857BWT1 BC858 BC858AWT1 BC585
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bc856bwt1bc857bwt1bc858awt1sc-70/sot-323+7 | |
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Contextual Info: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m |
OCR Scan |
bc856bc857bc858bc856a+4 | |