BCW61A Search Results
BCW61A Datasheets (48)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BCW61A | Fairchild Semiconductor | PNP EPITAXIAL SILICON TRANSISTOR | Original | 32.27KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor | Original | 44.56KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor | Original | 73.4KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | General Semiconductor | General Purpose Bipolar Transistor, PNP, 32V, SOT-23, 3-Pin | Original | 62.96KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Infineon Technologies | PNP Silicon AF Transistor | Original | 232.59KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Infineon Technologies | SOT23 package | Original | 88.91KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Infineon Technologies | Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; VCEO (max): 32.0 V; VCBO (max): 32.0 V; IC(max): 100.0 mA; ICM (max): 200.0 mA; | Original | 168.32KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Kexin | General Purpose Transistor | Original | 35.34KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Philips Semiconductors | Silicon Planar Epitaxial Transistor | Original | 69.75KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Siemens | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) | Original | 277.89KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | TY Semiconductor | General Purpose Transistor - SOT-23 | Original | 175.19KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Continental Device India | SOT-23 Transistors & Diodes Data Book 1995 | Scan | 58.45KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Continental Device India | Silicon Planar Epitaxial Transistors | Scan | 56.99KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Fairchild Semiconductor | PNP EPITAXIAL SILICON TRANSISTOR | Scan | 58.23KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Ferranti Semiconductors | Quick Reference Guide 1985 | Scan | 72.15KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Ferranti Semiconductors | SOT-23 Transistors & Diodes 1983 | Scan | 65.62KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Ferranti Semiconductors | Micro-Miniature Semiconductors and Silicon Networks 1977 | Scan | 28.97KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | ITT Semiconductors | TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-236 | Scan | 165.99KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Motorola | PNP silicon general purpose transistor. | Scan | 112KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW61A | Unknown | Semiconductor Master Cross Reference Guide | Scan | 118.79KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCW61A Price and Stock
Infineon Technologies AG BCW61AE6327HTSA1Trans GP BJT PNP 32V 0.1A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCW61AE6327HTSA1 | 213,000 | 7,076 |
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| BCW61AE6327HTSA1 | 54,000 | 7,076 |
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| BCW61AE6327HTSA1 | 48,000 | 7,076 |
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| BCW61AE6327HTSA1 | 42,000 | 7,076 |
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| BCW61AE6327HTSA1 | 33,000 | 7,076 |
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| BCW61AE6327HTSA1 | 21,000 | 7,076 |
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| BCW61AE6327HTSA1 | 21,000 | 7,076 |
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BCW61AE6327HTSA1 | 432,000 | 1 |
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BCW61AE6327HTSA1 | 30,000 | 12,000 |
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BCW61AE6327HTSA1 | 30,000 | 53 Weeks | 3,000 |
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BCW61AE6327HTSA1 | 9,165 |
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Infineon Technologies AG BCW61AE6327PNP SILICON AF TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCW61AE6327 | 12,000 |
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Philips Semiconductors BCW61APNP GENERAL PURPOSE TRANSISTORS Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCW61A | 8,420 |
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Others BCW61AE6327INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCW61AE6327 | 55,302 |
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Get Quote | |||||||
Siemens BCW61AE-6327IN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCW61AE-6327 | 260 |
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BCW61A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BCW61A BCW61B BCW61C BCW61D IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 2A Pin configuration 1 = BASE |
OCR Scan |
bcw61abcw61bbcw61cbcw61d | |
Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
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OCR Scan |
ot-23bfq31bcv72bfq31a+15 | |
BCW61A
Abstract: BCW61B BCW61C BCW61D 072d
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OCR Scan |
bcw61abcw61bbcw61cbcw61d+1 | |
BCW61AContextual Info: BCW61A . BCW61D BCW61A . BCW61D Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse |
Original |
bcw61abcw61dot-23o-236+3 | |
bc856b
Abstract: IC 8002
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Original |
bc807-16bc807-25bc807-40bc808-16+6 | |
Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
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OCR Scan |
ot-23bcv71bfq31bcv72+16 | |
transistor smd marking BAContextual Info: Transistors IC SMD Type Product specification BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 |
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bcw61a/b/c/dot-23bcw61abcw61b+3 | |
LC marking code transistor
Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor
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OCR Scan |
bcw61a/b/c/dks5086ot-23bcw61b+10 | |
transistor bc 537
Abstract: BCW61A BCW61C TRANSISTOR BV 32 BD marking BCW61D
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OCR Scan |
bcw61a/b/c/dkst5086ot-23bcw61b+6 | |
BCW61A
Abstract: BCW61B BCW61C BCW61D
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Original |
ot-23bcw61abcw61bbcw61c+2 | |
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Contextual Info: CDIL BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PA CKA G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.48 I 0.38 t1 3 I 2.4 1I Pin configuration |
OCR Scan |
bcw61abcw61bbcw61cbcw61d | |
Analog devices TOP marking Information
Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23
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Original |
bcw61a/b/c/dot-23kst5086bcw61amtf+7 | |
TMPT404Contextual Info: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A |
OCR Scan |
tmpt404 | |
42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
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OCR Scan |
bcw61bbcx716bcx71jbcw60+9 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC |
Original |
ot-23bcw61abcw61bbcw61c+2 | |
transistor mark BAContextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol |
OCR Scan |
bcw61a/b/c/dmmbt5086bcw61bcw61c+3 | |
FMMT2222A
Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
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OCR Scan |
ot-23bcv71bfq31bcv72+9 | |
BCW61A
Abstract: MMBT5086 482 transistor marking 9900
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OCR Scan |
71fa414s0007e12bcw61aot-23+3 | |
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Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature |
OCR Scan |
bcw61a/b/c/dot-23ks5086bcw61b+5 | |
BCW61BR
Abstract: BCW61DR BCW61CR BCW61 BCW61A BCW61AR BCW61B BCW61C BCW61D S0T23
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OCR Scan |
s0t23-bcw61abcw61bbcw61c+7 | |
BCW61A
Abstract: transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D ks5086
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Original |
bcw61a/b/c/dot-23ks5086bcw61b+6 | |
BCW60A
Abstract: BCW60D BCW61A BCW61B BCW61C BCW61D
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Original |
bcw61abcw61dot-23o-236+5 | |
F1K markingContextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature |
OCR Scan |
bcw61a/b/c/dks5086bcw61f1k marking | |
25CC
Abstract: BCW61A BCW61B BCW61C BCW61D
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OCR Scan |
bcw61abcw61bbcw61cbcw61d+1 | |