BCW29 Search Results

transistor 720 smd

Contextual Info: Transistors IC SMD Type Product specification BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

BCW29

Abstract: BCW30 BCW31 BCW32
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 13 2004 Jan 13 NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 FEATURES PINNING • Low current max. 100 mA

BCW29

Abstract: BCW30 BCW31 BCW33
Contextual Info: BCW29, BCW30 BCW29, BCW30 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-28 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: BCW29 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Symbol

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

BCW29

Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage

BCW29

Abstract: BCW30
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW31/32 DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30

Contextual Info: DISCRETE SEMICONDUCTORS DAT BCW29; BCW30 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 13 2004 Jan 13 NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 PINNING FEATURES • Low current max. 100 mA

BCW23

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BCW29 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Junction Tem perature Storage Tem perature

Contextual Info: SEMICONDUCTOR BCW31/32 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D ・Complementary to BCW29/30. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

bc856b

Abstract: IC 8002
Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D hFE VCE SAT fT VCEO IC

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Contextual Info: N AMER P H I L I P S / D I S CR E T E bb53T31 D01SbS3 DbE D BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK R E FE R E N C E D ATA

BCW29

Abstract: 1C11
Contextual Info: SEMICONDUCTOR BCW29 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C1 1 2 Item Marking Description Device Mark C1 BCW29 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BCW29

Abstract: BCW30
Contextual Info: SEMICONDUCTOR BCW29/30 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L DIM A B C D E G H J K L M N P 3 H G A 2 D ᴌComplementary to BCW31/32 1 MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC SYMBOL

Contextual Info: BCW29CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BCW29

Abstract: SOT23 MARKING CODE 720 BCW30 BCW31 BCW32 sot23 marking JR
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

marking 8b sot-23

Abstract: var vdc hfe nv BCW29 BCW29LT1 BCW30 BCW30LT1
Contextual Info: MOTOROLA Order this document by BCW29LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon BCW29LT1 BCW30LT1 COLLECTOR 3 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 Rating 2 Symbol Value Unit Collector–Emitter Voltage VCEO –32 Vdc Collector–Base Voltage

d0245

Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
Contextual Info: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

BCW29

Abstract: BCW30
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS

BF914

Abstract: BZV80 PXTA14 PMBTA64 PMBFJ177 BB219 PMBFJ174 BST60 PMBTA14 PMBT4401
Contextual Info: Surface Mount Transistors & Diodes Type Index Typ« Pag* ivi» Rage type Pago Type Page Type ' Page lype Page BA314L BA423L BA582 BA682 BA683 183 175 175 175 175 BC808-25 BC808-40 BC817-16 BC817-25 BC817-40 144 144 140 140 140 BCV72 BCW29 BCW30 BCW31 BCW32