BCW33 Search Results

BCW33

Abstract: BCW29 BCW30 BCW31 BCW32
Contextual Info: BCW31 . BCW33 BCW31 . BCW33 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-28 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

1N916

Abstract: AN-569 BCW33LT1 BW33LT1 MPS3904
Contextual Info: BCW33LT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 32 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board Note 1

BCW32

Abstract: BCW31 BCW33
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

1N916

Abstract: BCW33LT1 BCW33LT1G BCW33LT3 BCW33LT3G MPS3904
Contextual Info: BCW33LT1 General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 32 Vdc Collector − Base Voltage VCBO 32 Vdc Emitter − Base Voltage

BCW33CSM

Contextual Info: BCW33CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW31

Abstract: BCW31R BCW32R BCW33R BCV72 BCW32 BCW33 BFQ31 BFQ31A ferranti
Contextual Info: I BCW31 BCW32 BCW33 FERRANTI T IIsemiconductorsL NPN S ilic o n Planar Sm all S ignal Transistors D ESC R IP TIO N These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SO T-23 package these devices are designed specifically fo r use in thin and th ick Film

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

BCW31

Abstract: BCW32 BCW33
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g P A C K A G E O U T L IN E D E T A IL S BCW 31 = Dl A L L D IM E N S IO N S IN m m BCW 32 = D2 BCW 33 = D3 3.0 2.8 0 .14 0.48 1 0.38 1 » 3 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

BCW32

Abstract: bcw31 bcw32 bcw33 marking code 533-1 BCW31 BCW33 IEC134 lg tv system ic 5452N
Contextual Info: m bbSBTBl DOSHSb? ^14 « A P X N AUER PHILIPS/DISCRETE BCW31 BCW32 BCW33 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a m ic ro m in ia tu re plastic envelope. T hey are intended fo r lo w level general purpose ap p lica tio ns in th ic k and th in -film circu its.

BCW33

Abstract: MMBT5088
Contextual Info: SAMSUNG SEMICONDUCTOR INC BCW33 14E D j 0007207 2 | NPN EPITAXIAL SILICON TRANSISTOR T - ^ - !‘ utlMCKAL r U n r U o t 1rlAINold 1UH SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C S ym bol C h a ra c te ris tic ; Collector-Base Voltage ' Collector-Emitter Voltage

Contextual Info: NATL SEMICOND DISCRETE bflE D • bS01130 003^521 fiT3 » N S C S VcEQ(HSt) (Volts) Min 32 Devices Min BCW33 100 BCX58 100 NPN PMP BCX78 30 2N2222 mA NF (dB) Max Package I’ d (Amb) (mW) @25°C Max mA (MHz) Min 420 800 2.0 300 Typ 10 3.0 TO-236* 350 120

BCW33

Contextual Info: BCW33 BCW33 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 07. 3 2 1 SOT-23 Mark: D3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Contextual Info: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage

BCW33LT1G

Abstract: BCW33LT3G MPS3904 1N916 BCW33LT1
Contextual Info: BCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 32 Vdc Collector − Base Voltage

SBCW33LT1G

Contextual Info: BCW33LT1G, BCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

BCW32R

Abstract: BCW33R BCW31 BCW31R BCW32 BCW33 DS44
Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - D5 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL PARAMETER UNIT Collector-Base Voltage V CBO 32 V Collector-Emltter Voltage lc = 2.0mA

FAIRCHILD SOT-23 MARK 30

Abstract: BCW31 BCW32 BCW33
Contextual Info: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E B SOT-23 Mark: D1 / D2 / D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Absolute Maximum Ratings* Symbol 3 TA = 25°C unless otherwise noted

Contextual Info: BCW33LT1G, BCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: BCW33 BCW33 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 07. 3 2 1 SOT-23 Mark: D3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted