BCW31 Search Results

BCW33

Abstract: BCW29 BCW30 BCW31 BCW32
Contextual Info: BCW31 . BCW33 BCW31 . BCW33 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-28 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BCW31

Contextual Info: BCW31 BCW31 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. C E B SOT-23 Mark: D1 Absolute Maximum Ratings* Symbol 3 Ta = 25°C unless otherwise noted Parameter Value Units VCEO

BCW32

Abstract: BCW31 BCW33
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW31

Abstract: BCW31R BCW32R BCW33R BCV72 BCW32 BCW33 BFQ31 BFQ31A ferranti
Contextual Info: I BCW31 BCW32 BCW33 FERRANTI T IIsemiconductorsL NPN S ilic o n Planar Sm all S ignal Transistors D ESC R IP TIO N These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SO T-23 package these devices are designed specifically fo r use in thin and th ick Film

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

BCW31

Abstract: BCW32 BCW33
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g P A C K A G E O U T L IN E D E T A IL S BCW 31 = Dl A L L D IM E N S IO N S IN m m BCW 32 = D2 BCW 33 = D3 3.0 2.8 0 .14 0.48 1 0.38 1 » 3 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: BCW31 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

BCW29

Abstract: BCW30
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW31/32 DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30

BCW32

Abstract: bcw31 bcw32 bcw33 marking code 533-1 BCW31 BCW33 IEC134 lg tv system ic 5452N
Contextual Info: m bbSBTBl DOSHSb? ^14 « A P X N AUER PHILIPS/DISCRETE BCW31 BCW32 BCW33 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a m ic ro m in ia tu re plastic envelope. T hey are intended fo r lo w level general purpose ap p lica tio ns in th ic k and th in -film circu its.

sot-23 marking LC

Abstract: BCW31 KST5088
Contextual Info: NPN EPITAXIAL SILICON TR A NSISTO R BCW31 GENERAL PURPOSE TRANSISTOR ABSOLUTE M A XIM U M RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r - E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

Contextual Info: BCW31 BCW31 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

transistor NF marking code

Abstract: marking code r1 sot23 Marking 02 SOT23 MARKING bw SOT23 transistor sot23 pf
Contextual Info: Central BCW31 TM Semiconductor Corp. NPN GENERAL PURPOSE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW31, manufactured in the popular SOT-23 Surface Mount package, is an NPN General Purpose Switching and Amplification Transistor, suitable for applications requiring collector currents up to

Contextual Info: BCW31L Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.110 h(FE) Max. Current gain.

Contextual Info: SEMICONDUCTOR BCW31/32 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D ・Complementary to BCW29/30. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage

BCW31

Abstract: KST5088
Contextual Info: BCW31 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BCW31 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollecto r-E m itte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation S torage Tem perature

BCW29

Abstract: BCW30
Contextual Info: SEMICONDUCTOR BCW29/30 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L DIM A B C D E G H J K L M N P 3 H G A 2 D ᴌComplementary to BCW31/32 1 MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC SYMBOL