XCM-A102
Abstract: XCMA102 BCF70 transistor marking 68t
Contextual Info: • bbS3T31 □02i*SGtì EIE « A P X N AMER PHILIPS/DISCRETE BCF70 t?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icro m in ia tu re plastic envelope, intended fo r lo w level, lo w noise ap p lica tio ns in th ic k and th in -film circuits.
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bbs3t31bcf707z68043xcm-a102+2xcma102transistor marking 68t
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197xs310nw1p 59 transistorw1p 48 transistor+8transistor w1p 83icm ap 1703transistor smd marked rnwtransistor bd139 ph 71w1p 66 transistortransistor w1p 91pnp transistor smd ba rnw1p npn
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d0245
Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
Contextual Info: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.
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bb53s31dq545blbcw29bcw30+7200juaot-23bbs31317z68043d0245iec134332 z marking, sot-23
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BCW30
Abstract: BCW29 ic marking ETH ScansUX40 IEC134
Contextual Info: 7il0fl2b OObûSE? ETH • P H I N BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icrom iniature plastic envelope, intended fo r tow level general purpose appli cations in th ick and thin-film circuits. Q U IC K R E F E R E N C E D A T A
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711002bbcw29bcw30200ma+400bfl53sic marking ethscansux40iec134
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