FREQ300M Search Results

Contextual Info: PZT2222AT1 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: CIL256 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2SA1729 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3736 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200

Contextual Info: MMST2222A Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)70.0 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: MAT04AY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: CA3146AM Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)50m P(D) Max. (W)750m Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: NTE2361 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.

Contextual Info: MAT04FY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MPS2926 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.470 h(FE) Max. Current gain.

Contextual Info: LM3046D Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MM709

Contextual Info: MM709 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)8.0 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: BSS67 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175 I(CBO) Max. (A)50nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.

Contextual Info: CIL215 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)60m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: MQ3251 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)50m P(D) Max. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: KSC2859 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)500m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.

Contextual Info: CIL218 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)60m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

Contextual Info: BC849BR Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: BC109PK Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: BC547VIP Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N3308 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

BC850BR

Contextual Info: BC850BR Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2SC3392-4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200

Contextual Info: 2SC3734 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.