BCW60A Search Results

sot 23 mark AD

Abstract: BCW60A BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 32 32 5 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: General Purpose Transistors NPN Silicon BCW60ALT1 BCW60BLT1 BCW60DLT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector–Emitter Voltage V CEO 32 Vdc 2 Collector–Base Voltage V CBO 32 Vdc CASE 318–08, STYLE 6 Emitter–Base Voltage

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A BCW60B BCW60C BCW60D CD1IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW 60A = AA BCW60B = AB BCW 60C = AC P A C K A G E O U T L IN E D E T A IL S BCVV60D —AD A L L D IM EN SIO N S IN m m J3.0 2 . 8~ 0.1 4 0.48 0.38

Contextual Info: S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW 60 PARTMARKING DETAILS:BCW60A - AA BCW60AR - CR BCW60B - AB BCW60BR - DR BCW60C - AC BCW60CR - AR BCW60D - AD BCW60DR - BR ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT C ollector-B ase V oltag e

BCW60A

Abstract: BCW60D BCW60B BCW60C transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

bcw 91 transistor

Abstract: TRANSISTOR K 2191
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW60ALT1 BCW60BLT1 BCW60DLT1 General Purpose T ran sisto rs NPN Silicon COLLECTOR 3 2 EMITTER 2 C A SE 318-08, STYLE 6 S O T - 23 TO-236AB M A XIM U M R ATING S Rating Symbol Value C o lle cto r-E m itte r V oltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW60ALT1 BCW60BLT1 BCW60DLT1 General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCW60D

Abstract: fairchild SOT-23 Mark PC BCW60A BCW60B BCW60C sot 23 mark AD MARKING AB FAIRCHILD
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

2N50b

Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A

Contextual Info: Transistors IC SMD Type Product specification BCW60A/B/C/D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 NPN epitaxial silicon transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit Pc 32 32 5 100 350 Tstg 15 0 V V V mA mW °C Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC

MPS3904 transistor

Abstract: 1N916 BCW60A BCW60ALT1 BCW60B BCW60BLT1 BCW60D BCW60DLT1 MPS3904
Contextual Info: MOTOROLA Order this document by BCW60ALT1/D SEMICONDUCTOR TECHNICAL DATA BCW60ALT1 BCW60BLT1 BCW60DLT1 General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 32

Contextual Info: CDU BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC BCW60D = AD PACKAG E O UTLIN E DETAILS ALL DIM EN SION S IN mm _3.0 2.8" 0.14 0.48 0.38 3 2.6 Pin configuration 2.4

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Contextual Info: BCW60A BCW60B BCW60C BCW60D IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN m m 0 .14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

smd marking AA

Abstract: BCW60B BCW60D transistor smd marking AD BCW60A BCW60C smd transistor marking 5K
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW60A/B/C/D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 NPN epitaxial silicon transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

BCW General Purpose Transistor

Abstract: l9902
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation