2N50b
Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A
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bfw832sc9972n50b22sc3122+10bfw64nr421denr421dfbf260bf2612n50bbcy5b2sc307bdiode bonbcw60rd
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2N4041
Abstract: 2N3375 ZTX327 2N3553 2n4427 Transistor 2N3866 RF 2N3866 2N3866 BLW17 BLW39
Contextual Info: RF POWER TRANSISTORS R.F. Performance Minimum Maximum Rating Package Type V ceio Vceo 55 30 Volts ZTX327 Vcc Volts Po u t Watts Pg dB f 12.0 10.0 L 6 .0 0.35 0.6 0.2 6.4 11.0 10.0 Volts •I fo MHz 400 1 175 175 J y E-line 2N3375 65 40 28.0 3.0 4.7 400 TO-60
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ztx3272n33752n35532n3866+82n4041o-1172n4427blw17o-131blw39transistor 2n3866rf 2n3866
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RF POWER TRANSISTOR 100MHz
Abstract: ZTX327 npn transistor 80mw transistor BR A 94 DSA0037650
Contextual Info: NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR ZTX327 ISSUE 2 MARCH 94 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE 55 UNIT V Collector-Emitter Voltage VCEO VCER 30 55 V V Emitter-Base Voltage
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ztx327100ma100mhz400mhz+4rf power transistor 100mhznpn transistor 80mwtransistor br a 94dsa0037650
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BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A
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ot-23bcv71bfq31bcv72+10bfq31abcw29bfs20bcw30bcw31bcw32bcw65cferranti electronicstransistors device markingbf197p
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ZTX3866
Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
Contextual Info: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive
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2n3866ztx327ztx3866mpsh10+8ot-232n44272n2708bfy90ztx325bfs17transistor 2n38662n918
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ZTX327
Abstract: ZTX321
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS PART NO. VCEO •c Vce V fT min @ MHz mA PIN OUT 123 V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.4 0.4 0.5 0.35 20 20 2 50 2.0 2.0 0.1 5.0 50 50 30 50 30 30 2 10 10 10 1 6 50 50 80 150 10 10
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mpsa42fxta42ztx341ztx300+7mpsa92fxta92ztx541ztx500ztx327ztx3866ztx321
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2N3866
Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains
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2n38662n44272n27082n918+8bfy90ot-23ztx325zetex ztx327zetex bfy90transistor 2n38662n2102bsy55
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ztx327
Abstract: BF197P FERRANTI ELECTRONICS H9 sot 23 BSS63 BSS64 FMMT918 FMMTA12 FMMTA13 FMMTA14
Contextual Info: SOT-23 TRANSISTORS D A R L IN G T O N -N P N R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature. Type hFE at Iq /V ce mA/Volts t Ic b o nA V cb V olts ic mA P to t * mW min 30 300 300 10K 10/5 100 30 30 300 300 5K 10/5 100 30 20 300
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ot-23fmmta14fmmta13fmmta12+1210x8x0fmmta42fmmta92fmmta43fmmta93bss64ztx327bf197pferranti electronicsh9 sot 23bss63fmmt918
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ZTX415
Abstract: ZTX341 ZTX384 S2222A ZTX327 ZTX321 ZTX3866 ZTX325
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS P ART V CBO v CEO hFE m ln @ V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.5 0 .3 5 -3 00 -300 -100 -3 00 -3 00 -100 -0 .5 -0 .5 -0.1 -0 .4 -0 .4 -0 .5 -25 -2 5 -0 .2 -0 .3 5 PIN f t LU v CE sat
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fxta42ztx341ztx300fxta92+10ztx500ztx327ztx3866fxt3866ztx325ztx320ztx415ztx384s2222aztx321
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RF Transistors
Abstract: BF197P ferranti micro-e ZTX327
Contextual Info: PLESSEY TS SEMICOND/MSCRETE 7220533 PLESSEY 5T|7aaDS33 SEMICOND/ D IS C R E T E 000Mtì 7 cì M 95D 04979 RF TRANSISTORS SMALL SIGNAL | • Many types are offered in a range of packages to enable the designer to select cost effective devices compatible with the equipment and market.
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7aads33000mtot-23bf196pf+8fsot-23\sot-23100mhz400mhzrf transistorsbf197pferranti micro-eztx327
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
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Transistor 2N3866
Abstract: ZTX321 ZTX323 AVALANCHE TRANSISTOR ZTX327 ZTX415 2N2708 2N3866 Scans-00107843 ZTX320
Contextual Info: TABLE 14: NPN HIGH FREQUENCY The devices shown in this table are designed for high frequency operation in such application areas as amplification, switching and oscillation. ZTX 3 2 0 ZTX321 ZTX 322 ZTX 323 ZTX 325 mA 30 15 15 15 15 15 400 1.0 500 0.4 500 0.4
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VHF Transistors
Abstract: ZTX325 2N2708 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
Contextual Info: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS VCBO VCEO lc Volts Volts mA Type P to t mW v ;E(sat hFE min./max. at Iq/V ce max at Ic/Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30
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THERMISTORS nsp 037
Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.
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200x300x360mthermistors nsp 037thyristor tag 9118ica 0726 0148 transformer+7a1273 y k transistoram97c11cntransistor sk a1104pm7a2qb8708bzy79yh 5032
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AVALANCHE TRANSISTOR
Abstract: ZTX415 ZTX327
Contextual Info: TABLE 14: NPN HIGH FREQUENCY The devices shown in this table are designed for high frequency operation in such application areas as amplification, switching and oscillation. Max. V CE sat| at Max. Type V 'c mA 400 1.0 15 500 0 .4 Z TX 321 15 500 ZTX322 15
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ztx327ztx320ztx322ztx323+3ztx325ztx415avalanche transistor
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PSH10
Abstract: ZTX327 PS5179
Contextual Info: Section S: Bipolar Transistors RF T ra n s is to rs E-Line N PN RF fy 400 to 1300 M H z Transistors (Pq = up to 5 0 0 m W max) Pinout Details: 1-Collector, 2-Base,
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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BF197P
Abstract: BF493 ztx342 cd BF196P ZTX327 FERRANTI ELECTRONICS BF393 MPSA42 MPSA92 ZTX320
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re
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ztx327bf196pfsot-23\sot-23+11bf196pf100mhzbf197p5bf197pbf493ztx342 cdferranti electronicsbf393mpsa42mpsa92ztx320
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RF Transistors
Abstract: 2N2708 2N3866 BF197 BF197P FERRANTI ELECTRONICS Transistor 2N3866 2N2102 2N4036 2N4427
Contextual Info: HIGH FREQUENCY T A B L E 7 - N P N S IL IC O N P L A N A R H IG H F R E Q U E N C Y T R A N S I S T O R S The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details
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2n9182n2708fsot-23\sot-23+14bf196pf100mhzbf197p5bf196pztx327rf transistors2n3866bf197bf197pferranti electronicstransistor 2n38662n21022n40362n4427
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2n222a
Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3
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ZTX542
Abstract: ZTX342 ZTX196 ZTX327 ZTX320 ZTX326 ZTX341 ZTX541
Contextual Info: HIGH FREQUENCY T A B L E 10 - N P N S ILIC O N P L A N A R H IG H F R E Q U E N C Y T R A N S IS T O R S The devices shown in this table are designed for high frequency operation in such application areas as am plification, sw itching and oscillation. The transistors marked w ith f are particularly suitable for use in RF and Video IF stages of
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MPSA42 equivalent
Abstract: MPSA43 equivalent MPSA92 equivalent ZTX320 equivalent ZTX542 equivalent ztx342 cd BZX88C BF493 ZTX541 equivalent ZTX327
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re
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ztx327bf196pbs9365bzx88-c5v1+14bft272n2484bzx88-c5v6bss47ztx342mpsa42 equivalentmpsa43 equivalentmpsa92 equivalentztx320 equivalentztx542 equivalentztx342 cdbzx88cbf493ztx541 equivalent
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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