ZTX322 Search Results

ZTX320

Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 ISSUE 3 -A P R IL 94 FE A T U R E S * 15 Volt VCE0 * fT=600 MHz A P P LIC A T IO N S * VHF/UHF operation ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage VALUE

Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 IS S U E 3 -A P R IL 94_ " ~~ FEATURES * 15 Volt VCE0 * fT=600 MHz APPLICATIONS * VHF/UHF operation ABSOLUTE MAXIMUM RATINGS. PARAM ETER

AVALANCHE TRANSISTOR

Abstract: ZTX415 ZTX327
Contextual Info: TABLE 14: NPN HIGH FREQUENCY The devices shown in this table are designed for high frequency operation in such application areas as amplification, switching and oscillation. Max. V CE sat| at Max. Type V 'c mA 400 1.0 15 500 0 .4 Z TX 321 15 500 ZTX322 15

ZTX320

Abstract: ZTX321 ZTX322 ZTX323 DSA003764
Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 ISSUE 3 – APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation TYPICAL CHARACTERISTICS 0.4 PD - Power Dissipation Watts 1000 fT - MHz 800 VCE=10V f=100MHz

ZTX3866

Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
Contextual Info: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive

ZTX327

Abstract: ZTX321
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS PART NO. VCEO •c Vce V fT min @ MHz mA PIN OUT 123 V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.4 0.4 0.5 0.35 20 20 2 50 2.0 2.0 0.1 5.0 50 50 30 50 30 30 2 10 10 10 1 6 50 50 80 150 10 10

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

2N2369 SOT-23

Abstract: nec RF package SOT89 2SC934 BSX26 2N5180 2SC389 BFY63 s0918 BSX87 2SC288A
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 >= Manufacturer V(BR)CEO fT (V) (Hz) hFE 15 15 15 15 15 15 15 15 15 15 500M 500M 500M 500M 500M 500M 500M 500M 500M 500M 40 40 40 40 40 40 40

Transistor 2N3866

Abstract: ZTX321 ZTX323 AVALANCHE TRANSISTOR ZTX327 ZTX415 2N2708 2N3866 Scans-00107843 ZTX320
Contextual Info: TABLE 14: NPN HIGH FREQUENCY The devices shown in this table are designed for high frequency operation in such application areas as amplification, switching and oscillation. ZTX 3 2 0 ZTX321 ZTX 322 ZTX 323 ZTX 325 mA 30 15 15 15 15 15 400 1.0 500 0.4 500 0.4

VHF Transistors

Abstract: ZTX325 2N2708 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
Contextual Info: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS VCBO VCEO lc Volts Volts mA Type P to t mW v ;E(sat hFE min./max. at Iq/V ce max at Ic/Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

PSH10

Abstract: ZTX327 PS5179
Contextual Info: Section S: Bipolar Transistors RF T ra n s is to rs E-Line N PN RF fy 400 to 1300 M H z Transistors (Pq = up to 5 0 0 m W max) Pinout Details: 1-Collector, 2-Base,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BF197P

Abstract: BF493 ztx342 cd BF196P ZTX327 FERRANTI ELECTRONICS BF393 MPSA42 MPSA92 ZTX320
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­

ZTX542

Abstract: BF493 ztx342 cd ZTX327 ZTX342 ztx541 mpsa92 BF196P BF393 MPSA42
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­

ztx323

Abstract: HF transistors table ZTX327 ZTX325
Contextual Info: R.F. TR A N S IS T O R S A N O DIODES TABLE 1: NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range o f high frequency applications where high f T, low noise and low intermodulation distortion features are required.